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SE8205

Description
MOS tube field effect tube 20V 6A N channel
CategoryDiscrete semiconductor   
File Size490KB,6 Pages
ManufacturerSINO-IC Microelectronic Co., Ltd.
Websitehttp://www.sino-ic.net
Shanghai Guangyu Ruixin Microelectronics Co., Ltd. specializes in the design, development and sales of semiconductor overvoltage protection devices and integrated circuits. It is one of the domestic suppliers that masters the core technology of semiconductor overvoltage protection devices and integrated circuits. They are used in communication systems, portable products, lithium battery protection, power system overvoltage protection, LED drive, etc.
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SE8205 Overview

MOS tube field effect tube 20V 6A N channel

Features

Product name: MOS field effect tube 20V 6A N channel


Product model: SE8205


product features:


VDS = 20V,ID = 6A


RDS(ON) < 34.5mΩ @ VGS=2.5V


RDS(ON) < 24.5mΩ @ VGS=4.5V


High Power and current handing capability


Lead free product is acquired


Surface Mount Package



Applications:


Battery protection


Load switch


Power management



Construction :


Silicon epitaxial planer



Package: TSSOP-8



Replacement product: FAIRCHILD FDW9926


SE8205 Preview

Download Datasheet
SHANGHAI
MICROELECTRONICS CO., LTD.
June 2006
SE8205
N-Channel Enhancement Mode Field Effect Transistor
Revision:B
External Dimensions: (Unit:mm)
Features
V
DS
= 20V,I
D
= 6A
R
DS(ON)
< 34.5mΩ @ V
GS
=2.5V
R
DS(ON)
< 24.5mΩ @ V
GS
=4.5V
High Power and current handing capability
Lead free product is acquired
Surface Mount Package
Applications
Battery protection
Load switch
Power management
Construction
Silicon epitaxial planer
Absolute maximum ratings (Ta=25℃)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous@
Current-Pulsed (Note 1)
Maximum Power Dissipation
Operating Junction and Storage
Temperature Range
Symbol
V
DS
V
GS
I
D
I
DM
P
D
T
J
,T
STG
Limits
20
±10
6
25
1.5
-55 To 150
Unit
V
V
A
A
W
THERMAL CHARACTERISTICS
Thermal Resistance,Junction-to-Ambient (Note 2)
R
θJA
83
/W
Electrical characteristics (Ta=25℃)
Parameter
OFF
CHARACTERISTICS
Symbol
Conditions
Min.
Typ.
Max.
Unit
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
BV
DSS
I
DSS
V
GS
=0V I
D
=250μA
V
DS
=20V,V
GS
=0V
V
GS
=±10V,V
DS
=0V
20
0.8
±80
V
μA
nA
I
GSS
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