SE100130A datasheet, PDF - EEWORLD Datasheet

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SE100130A: DescriptionDrain-source voltage (Vdss): 100V Continuous drain current (Id) (at 25°C): 130A Gate-source threshold voltage: 3V @ 250uA Drain-source on-resistance: 4mΩ @ 40A, 10V Maximum power dissipation (Ta= 25°C): 285W Type: N-channel N-channel, 100V; CategoryDiscrete semiconductor MOS (field effect tube); File Size419KB，7 Pages; ManufacturerSINO-IC Microelectronic Co., Ltd.; Websitehttp://www.sino-ic.net; Shanghai Guangyu Ruixin Microelectronics Co., Ltd. specializes in the design, development and sales of semiconductor overvoltage protection devices and integrated circuits. It is one of the domestic suppliers that masters the core technology of semiconductor overvoltage protection devices and integrated circuits. They are used in communication systems, portable products, lithium battery protection, power system overvoltage protection, LED drive, etc.

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SE100130A Overview

Drain-source voltage (Vdss): 100V Continuous drain current (Id) (at 25°C): 130A Gate-source threshold voltage: 3V @ 250uA Drain-source on-resistance: 4mΩ @ 40A, 10V Maximum power dissipation (Ta= 25°C): 285W Type: N-channel N-channel, 100V

SE100130A Parametric

Parameter Name	Attribute value
Drain-source voltage (Vdss)	100V
Continuous drain current (Id) at 25°C	130A
Gate-source threshold voltage	3V @ 250uA
Drain-source on-resistance	4mΩ @ 40A,10V
Maximum power dissipation (Ta=25°C)	285W
type	N channel

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