SBR3501 datasheet, PDF - EEWORLD Datasheet

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SBR3501: DescriptionBridge Rectifier Diode, 35A, 100V V(RRM),; CategoryDiscrete semiconductor diode; File Size543KB，4 Pages; ManufacturerYangzhou Yangjie Electronic Technology Co., Ltd.; Websitehttp://www.21yangjie.com/; Yangzhou Yangjie Electronic Technology Co., Ltd. was established on August 2, 2006 with a registered capital of RMB 472 million. In January 2014, the company was listed on the Shenzhen Stock Exchange's Growth Enterprise Market with the stock code 300373. In 2017, the company's operating income was RMB 1.47 billion. The company integrates R&D, production and sales, and is professionally committed to the industrial development of power semiconductor chips and device manufacturing, integrated circuit packaging and testing, etc. The company's main products are various power electronic device chips, power diodes, rectifier bridges, high-power modules, DFN/QFN products, SGT MOS and silicon carbide SBD, silicon carbide JBS, etc. The products are widely used in many fields such as consumer electronics, security, industrial control, automotive electronics, and new energy.

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SBR3501 Overview

Bridge Rectifier Diode, 35A, 100V V(RRM),

Features

Product Name: SILICON / GLASS PASSIVATED THREE PHASE BRIDGE RECTIFIERS Silicon / Glass Passivated Three-Phase Bridge Rectifier

Product model: SBR3501

product features:

Diffused Junction

Low Forward Voltage Drop

High Current Capability

High Reliability

High Surge Current Capability

Ideal for Printed Circuit Boards

Mechanical data:

Case: Epoxy Case with Heat Sink Interally

Mounted in the Bridge Encapsulation

Terminals:Plated Leads Solderable per

MIL-STD_202.Method 208

Polarity: As Marked on Body

Weight:20 grams (apprex.)

Mounting Position:

Bolt Down on Heatsink With Silicone Thermal

Compound Between Bridge and Mouting Surface

For Maximun Heat Transfer Efficiency

Mounting Torque:20 in Ibs.Max.

Marking:Type Number

Maximum Ratings and Electrical Characteristics:

Rating at 25℃ ambient temperature unless otherwise specified.

Single phase, half wave, 60 Hz, resistive or inductive load.

For capacitive load, derate current by 20%

product data:

Peak Repetitive Reverse Voltage VRRM Maximum reverse peak voltage: 100V

Working Peak Reverse Voltage VRWM Working Peak Reverse Voltage: 100V

DC Blocking Voltage VR DC blocking voltage: 100V

Peak Non-Repetitive Reverse Voltage VRSM Peak reverse voltage: 150V

RMS Reverse Voltage VR(RMS) Reverse voltage effective value: 70V

Maximum Average Forward Rectified Current @TC = 100℃ I(AV) Maximum forward current: 35 A

Non-Repetitive Peak Forward Surge Current Non-Repetitive Peak Forward Surge Current:

(No Voltage Reapplid t=8.3ms at 60Hz) IFSM ：500 A

(No Voltage Reapplid t=10ms at 50Hz) IFSM ：475 A

(100% Reapplid t=8.3ms at 60Hz) IFSM ：420A

(100% Reapplid t=10ms at 50Hz) IFSM ：400 A

(I^2)t Rating for fusing

(No Voltage Reapplid t=8.3ms at 60Hz) (I^2)t ：1030 (A^2)S

(No Voltage Reapplid t=10ms at 50Hz) (I^2)t ：1130 (A^2)S

(100% Reapplid t=8.3ms at 60Hz) (I^2)t ：730 (A^2)S

(100% Reapplid t=10ms at 50Hz) (I^2)t ：800(A^2)S

Forward Voltage (per element) @ TJ=25℃,@IFM=40Apk per single junction VF ：1.2V

Peak Reverse Current (per leg) @ TJ=25℃ IR Maximum reverse leakage current: 10μA

At Rated DC Blocking Voltage @ TJ = 125℃ IR Maximum Reverse Leakage Current: 5.0mA

RMS Isolation Voltage from Case to Lead VISO ：2500V

Operating Temperature Range TJ Operating Junction Temperature: -40 to +125 ℃

Storage Temperature Range TSTG Storage Temperature Range: -40 to +150 ℃

Thermal Resistance Junction to Case at DC Operation per Bridge RθJC Thermal resistance coefficient: 1.16K/W

Thermal Resistance Case to Heatsink Mounting Surface,Smooth,Flat and Greased RθCS ：0.2K/W

Package: SKBPC

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