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S8550H

CategoryDiscrete semiconductor    triode   
File Size301KB,5 Pages
ManufacturerYangzhou Yangjie Electronic Technology Co., Ltd.
Websitehttp://www.21yangjie.com/
Yangzhou Yangjie Electronic Technology Co., Ltd. was established on August 2, 2006 with a registered capital of RMB 472 million. In January 2014, the company was listed on the Shenzhen Stock Exchange's Growth Enterprise Market with the stock code 300373. In 2017, the company's operating income was RMB 1.47 billion. The company integrates R&D, production and sales, and is professionally committed to the industrial development of power semiconductor chips and device manufacturing, integrated circuit packaging and testing, etc. The company's main products are various power electronic device chips, power diodes, rectifier bridges, high-power modules, DFN/QFN products, SGT MOS and silicon carbide SBD, silicon carbide JBS, etc. The products are widely used in many fields such as consumer electronics, security, industrial control, automotive electronics, and new energy.
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S8550-L THRU S8550-H
 
RoHS
 
COMPLIANT
PNP General Purpose Amplifier
Features
● Epoxy meets UL-94 V-0 flammability rating
● Moisture Sensitivity Level 1
● Marking:
S8550-L : 2TY·L
S8550-H: 2TY
Maximum Ratings
(Ta=25℃ unless otherwise noted)
Item
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Total Device Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
PD
Tj
TSTG
Unit
V
V
V
mA
mW
Conditions
I
C
=-100uAdc, I
B
=0
I
C
=-100uAdc, I
E
=0
I
E
=-100uAdc, I
C
=0
Value
-40
-25
-5
-500
300
150
-55 to +150
Electrical Characteristics
(Ta=25℃ unless otherwise noted)
Item
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Base cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Symbol
V
(BR)CBO
V
(BR)CEO*
V
(BR)EBO
I
CEX
I
CBO
I
EBO
h
FE
1
h
FE
2
V
CE(sat)
V
BE(sat)
f
T
V
V
MHz
Unit
V
V
V
nA
nA
nA
Conditions
IC=-100uA,IE=0
IC =-100uA,IB=0
IE=-100μA,IC=0
VCE=-20V, IB =0
VCB=-40V, IE=0
VEB=-5V, IC =0
VCE=-1V,IC=-50mA
VCE=-1V,IC=-500mA
IC=-500mA,IB=-50mA
IC=-500mA,IB=-50mA
VCE=-6V,IC=-20mA,f=30MHz
150
120
50
-0.6
-1.2
Min
-40
-25
-5
-100
-100
-100
350
Typ
Max
1/5
S-S1643
Rev.1.1,24-Jan-19
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com
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