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PJW4P06A

Description
60V P-Channel Enhancement Mode MOSFET
File Size407KB,8 Pages
ManufacturerPANJIT
Websitehttp://www.panjit.com.tw/

PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values ​​include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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PJW4P06A Overview

60V P-Channel Enhancement Mode MOSFET

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PPJW4P06A
60V P-Channel Enhancement Mode MOSFET
Voltage
Features
R
DS(ON)
, V
GS
@-10V,I
D
@-4.0A<110mΩ
R
DS(ON)
, V
GS
@-4.5V,I
D
@-2.0 A<130mΩ
High switching speed
Improved dv/dt capability
Low Gate Charge
Low reverse transfer capacitance
Lead free in compliance with EU RoHS 2011/65/EU directive.
Green molding compound as per IEC61249 Std.
1
-60 V
Current
-4.0 A
SOT-223
(Halogen Free)
Mechanical Data
Case : SOT-223 Package
Terminals : Solderable per MIL-STD-750, Method 2026
Approx. Weight : 0.043 ounces, 0.123 grams
Marking: W4P06A
Maximum Ratings and Thermal Characteristics
(T
A
=25 C unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
T
A
=25
o
C
Continuous Drain Current
Pulsed Drain Current
Power Dissipation
(Note 1)
o
SYMBOL
V
DS
V
GS
T
A
=70
o
C
T
A
=25
o
C
T
A
=70
o
C
P
D
E
AS
T
J
,T
STG
R
θJA
I
D
I
DM
LIMIT
UNITS
V
V
A
A
W
mJ
o
-60
+20
-4
-3.2
-16
3.1
2
12.8
-55~150
40.3
o
Single Pulse Avalanche Energy
(Note 5)
Operating Junction and Storage Temperature Range
Typical Thermal resistance
-
Junction to Ambient
(Note 6)
Limited only By Maximum Junction Temperature
C
C/W
July 7,2015-REV.00
Page 1

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