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PJSD24TST/R13

Description
Trans Voltage Suppressor Diode, 120W, 24V V(RWM), Unidirectional, 1 Element, Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-2
CategoryDiscrete semiconductor    diode   
ManufacturerPANJIT
Websitehttp://www.panjit.com.tw/
Environmental Compliance  

PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values ​​include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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PJSD24TST/R13 Overview

Trans Voltage Suppressor Diode, 120W, 24V V(RWM), Unidirectional, 1 Element, Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-2

PJSD24TST/R13 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerPANJIT
package instructionR-PDSO-F2
Contacts2
Reach Compliance Codecompliant
Minimum breakdown voltage26.7 V
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 codeR-PDSO-F2
Maximum non-repetitive peak reverse power dissipation120 W
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-50 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
polarityUNIDIRECTIONAL
Certification statusNot Qualified
Maximum repetitive peak reverse voltage24 V
surface mountYES
technologyAVALANCHE
Terminal formFLAT
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED

PJSD24TST/R13 Preview

Download Datasheet
PJSD03TS~PJSD36TS
SINGLE LINE TVS DIODE FOR ESD PROTECTION PORTABLE ELECTRONICS
VOLTAGE
FEATURES
• 120 Watts peak pules power( tp=8/20μs)
• Small package for use in portable electronics
• Suitable replacement for MLV’S in ESD protection applications
• Low clamping voltage and leakage current
0.034(0.85)
0.029(0.75)
0.050(1.25)
0.045(1.15)
3~36 Volts
POWER
120 Watts
SOD-523
Unit
inch(mm)
0.014(0.35)
0.009(0.25)
0.026(0.65)
0.021(0.55)
APPLICATIONS
• Case: SOD-523 plastic
• Terminals : Solderable per MIL-STD-750,Method 2026
• Approx Weight: 0.0014 grams
• Marking : PJSD03TS : KD
PJSD05TS : KE
PJSD07TS : KF
PJSD08TS : KR
PJSD12TS : LE
PJSD15TS : LM
PJSD24TS : LZ
PJSD36TS : MP
1
2
0.006(0.15)
0.002(0.05)
0.067(1.70)
0.059(1.50)
0.20 MIN.
Cathode
Anode
MAXIMUM RATINGS AND ELECTRICAL CHATACTERISTICS
ABSOLUTE MAXIMUM RATING
Rating
Peak Pulse Power Dissipation (tp=8/20
μs)
ESD Voltage
Operating Temperature
Storage Temperature
Symbol
P
PP
V
ESD
T
J
T
STG
Value
120
25
-50 to +150
-50 to +150
Units
W
KV
O
C
C
O
ELECTRICALCHATACTERISTICS
PJSD03TS
Parameter
Reverse Stand-Off Voltage
Reverse Breakdown Voltage
Reverse Leakage Current
Clamping Voltage(8/20μs)
Off State Junction Capacitance
Off State Junction Capacitance
Symbol
V
RWM
V
BR
I
R
V
C
C
J
C
J
Conditions
-
I
BR
=1mA
V
R
=3.3V
I
PP
=5A
0Vdc Bias=f=1MHz
3.3Vdc Bias=f=1MHz
Min.
-
4
-
-
-
-
Typical
-
-
-
-
-
-
Max.
3.3
-
200
6.5
200
100
Units
V
V
μA
V
pF
pF
July 20.2010-REV.00
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