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PJSD05LCTM-AU_R0_10001

Description
BI-DIRECTIONAL ESD PROTECTION DIODE
File Size182KB,5 Pages
ManufacturerPANJIT
Websitehttp://www.panjit.com.tw/

PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values ​​include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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PJSD05LCTM-AU_R0_10001 Overview

BI-DIRECTIONAL ESD PROTECTION DIODE

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PJSD05LCTM-AU
BI-DIRECTIONAL ESD PROTECTION DIODE
This Penta has been designed to Protect Sensitive Equipment against ESD and to prevent Latch-Up
events in CMOS circuitry operating at 5Vdc and below.This offers an integrated solution to protect up to
data line where the board space is a premium.
SPECIFICATION FEATURES
• 25W Power Dippsipation (8/20s Waveform)
• Low Leakage Current, Maximum of 1
A@5Vdc
• Very low Clamping voltage
• IEC 61000-4-2 ESD 15kV air, 8kV Contact Compliance
• Lead free in comply with EU RoHS 2011/65/EU directives
• Green molding compound as per IEC61249 Std. . (Halogen Free)
• Acqire quality system certificate : TS16949
• AEC-Q101 qualified
APPLICATIONS
• Video I/O ports protection
• Set Top Boxes
• Portable Instrumentation
MECHANICAL DATA
• Case : SOD-923, Plastic
• Terminals : Solderable per MIL-STD-750, Method 2026
• Approx. Weight : 0.0004gram
• Marking : X
MAXIMUM RATINGS
Rating
Peak Pulse Power (8/20
s
Waveform)
Peak Pulse Current (8/20
s
Waveform)
ESD Voltage (HBM)
O p e ra t i ng J unc t i o n a nd S t o r a g e Te mp e r a t ur e Ra ng e
Symbol
Value
25
2
>25
-55 to +150
Units
W
A
kV
O
P
PP
I
PP
V
ESD
T
J
, T
S TG
C
ELECTRICAL CHARACTERISTICS (T
A
=25
o
C)
Parameter
Reverse Stand-Off Voltage
Reverse Breakdown Voltage
Reverse Leakage Current
Clamping Voltage (8/20s)
Off State Junction Capacitance
Symbol
V
WRM
V
BR
I
R
V
C
C
J
I
BR
=1mA
V
R
=5V
I
PP
=2A
0 Vdc Bias f=1MHz
Conditions
Min.
-
5.78
-
-
-
Typ.
-
-
-
-
-
Max.
5.0
7.82
1.0
12.5
15
Units
V
V
A
V
pF
February 2,2013-REV.03
PAGE . 1
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