PJS6809_S2_00001 datasheet, PDF

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PJS6809_S2_00001: DescriptionPower Field-Effect Transistor, 2.6A I(D), 30V, 0.115ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-6; CategoryDiscrete semiconductor The transistor; ManufacturerPANJIT; Websitehttp://www.panjit.com.tw/; PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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PJS6809_S2_00001 Overview

Power Field-Effect Transistor, 2.6A I(D), 30V, 0.115ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-6

PJS6809_S2_00001 Parametric

Parameter Name	Attribute value
Maker	PANJIT
package instruction	SMALL OUTLINE, R-PDSO-G6
Reach Compliance Code	compliant
Configuration	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	30 V
Maximum drain current (ID)	2.6 A
Maximum drain-source on-resistance	0.115 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PDSO-G6
Number of components	2
Number of terminals	6
Operating mode	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	P-CHANNEL
Maximum pulsed drain current (IDM)	10.4 A
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
transistor applications	SWITCHING
Transistor component materials	SILICON

PJS6809_S2_00001 Preview

PPJS6809

30V P-Channel Enhancement Mode MOSFET

Voltage

Features



-30 V

Current

-2.6A

SOT-23 6L

Unit : inch(mm)

DS(ON)

, V

@-10V, I

@-2.6A<115mΩ

DS(ON)

, V

@-4.5V, I

@-1.7A<150mΩ

Advanced Trench Process Technology

Specially Designed for Switch Load, PWM Application, etc.

Lead free in compliance with EU RoHS 2011/65/EU

directive.



Green molding compound as per IEC61249 Std.

(Halogen Free)

Mechanical Data



Case:

SOT-23 6L

Package

Terminals: Solderable per MIL-STD-750, Method 2026

Approx. Weight: 0.0005 ounces, 0.014 grams

Marking: ST9

Maximum Ratings and Thermal Characteristics

=25 C unless otherwise noted)

PARAMETER

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

Pulsed Drain Current

Power Dissipation

=25

Derate above 25

SYMBOL

STG

θJA

LIMIT

UNITS

mW/

-30

+20

-2.6

-10.4

1.25

-55~150

100

Operating Junction and Storage Temperature Range

Typical Thermal resistance

Junction to Ambient

(Note 3)

C/W

June 8,2015-REV.03

Page 1

PPJS6809

Electrical Characteristics

=25 C unless otherwise noted)

PARAMETER

Static

Drain-Source Breakdown Voltage

Gate Threshold Voltage

Drain-Source On-State Resistance

Zero Gate Voltage Drain Current

Gate-Source Leakage Current

Dynamic

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Switching

Turn-On Delay Time

Turn-On Rise Time

Turn-Off Delay Time

Turn-Off Fall Time

Drain-Source Diode

Maximum Continuous Drain-Source

Diode Forward Current

Diode Forward Voltage

---

=-1.0A, V

=0V

-0.77

-1.5

-1.2

(on)

(off)

=-15V, I

=-2.6A,

=-10V,

=6Ω

(Note 1,2)

Ciss

Coss

Crss

=-15V, I

=-2.6A,

=-10V

(Note 1,2)

=-15V, V

=0V,

f=1.0MHZ

9.8

1.5

2.2

396

DSS

GS(th)

DS(on)

DSS

GSS

=0V, I

=-250uA

, I

=-250uA

=-10V, I

=-2.6A

=-4.5V, I

=-1.7A

=-30V, V

=0V

=+20V, V

=0V

-30

-1

-1.31

116

-0.01

+10

-2.1

115

150

-1

+100

mΩ

SYMBOL

TEST CONDITION

MIN.

TYP.

MAX.

UNITS

NOTES :

1. Pulse width<300us, Duty cycle<2%

2. Essentially independent of operating temperature typical characteristics.

3. R

JA

is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is

defined as the solder mounting surface of the drain pins mounted on a 1 inch FR-4 with 2oz. square pad of copper

4. The maximum current rating is package limited

June 8,2015-REV.03

Page 2

PPJS6809

TYPICAL CHARACTERISTIC CURVES

Fig.1 On-Region Characteristics

Fig.2 Transfer Characteristics

Fig.3 On-Resistance vs. Drain Current

Fig.4 On-Resistance vs. Junction temperature

Fig.5 On-Resistance Variation with VGS.

Fig.6 Body Diode Characteristics

June 8,2015-REV.03

Page 3

PPJS6809

TYPICAL CHARACTERISTIC CURVES

Fig.7 Gate-Charge Characteristics

Fig.8 Threshold Voltage Variation with Temperature

Fig.9 Capacitance vs. Drain-Source Voltage

June 8,2015-REV.03

Page 4

PPJS6809

PART NO PACKING CODE VERSION

Part No Packing Code

PJS6809_S1_00001

PJS6809_S2_00001

Package Type

SOT-23 6L

Packing type

3K pcs / 7” reel

10K pcs / 13” reel

Marking

ST9

Version

Halogen free

MOUNTING PAD LAYOUT

0.024

(0.60)

0.026

(0.67)

0.037

(0.95)

0.037

(0.95)

June 8,2015-REV.03

0.096

(2.43)

Page 5

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