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PJP75N06

Description
60V N-Channel Enhancement Mode MOSFET
CategoryDiscrete semiconductor    The transistor   
File Size130KB,4 Pages
ManufacturerPANJIT
Websitehttp://www.panjit.com.tw/

PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values ​​include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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PJP75N06 Overview

60V N-Channel Enhancement Mode MOSFET

PJP75N06 Parametric

Parameter NameAttribute value
MakerPANJIT
Reach Compliance Codecompli

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PJP75N06
60V N-Channel Enhancement Mode MOSFET
FEATURES
• R
DS(ON)
, V
GS
@10V,I
DS
@30A=13mΩ
• R
DS(ON)
, V
GS
@4.5V,I
DS
@30A=18mΩ
• Advanced Trench Process Technology
• High Density Cell Design For Ultra Low On-Resistance
• Specially Designed for Converters and Power Motor Controls
• Fully Characterized Avalanche Voltage and Current
• Pb free product : 99% Sn above can meet RoHS environment
substance directive request
MECHANICALDATA
• Case: TO-220 Molded Plastic
• Terminals : Solderable per MIL-STD-750D,Method 1036.3
• Marking : P75N06
Drain
PIN Assignment
Gate
1. Gate
2. Drain
3. Source
Source
Maximum RATINGS and Thermal Characteristics (T
A
=25
O
C unless otherwise noted )
PA RA M E TE R
D r a i n- S o ur c e Vo l t a g e
G a t e - S o ur c e Vo l t a g e
C o nt i nuo us D r a i n C ur r e nt
P ul s e d D r a i n C ur r e nt
1)
S ym b o l
V
DS
V
GS
I
D
I
D M
T
A
= 2 5
O
C
T
A
= 7 5
O
C
P
D
T
J
, T
S TG
E
AS
R
θ
JC
R
θ
JA
Li mi t
60
+20
75
350
105
6 2 .5
-5 5 to + 1 5 0
400
1 .2
62
U ni t s
V
V
A
A
W
O
M a xi m um P o w e r D i s s i p a t i o n
O p e r a t i n g J u n c t i o n a n d S t o r a g e Te m p e r a t u r e R a n g e
Avalanche Energy with Single Pulse
ID=40A, VDD=25V, L=0.5mH
Junction-to-Case Thermal Resistance
Junction-to Ambient Thermal Resistance(PCB mounted)
2
C
mJ
O
C /W
C /W
O
Note: 1. Maximum DC current limited by the package
PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE
STAD-JUN.19.2006
PAGE . 1
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