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PJESDA5V6-5G_R2_00001

Description
Trans Voltage Suppressor Diode, 40W, 3V V(RWM), Unidirectional, 5 Element, Silicon,
CategoryDiscrete semiconductor    diode   
ManufacturerPANJIT
Websitehttp://www.panjit.com.tw/
Environmental Compliance

PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values ​​include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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PJESDA5V6-5G_R2_00001 Overview

Trans Voltage Suppressor Diode, 40W, 3V V(RWM), Unidirectional, 5 Element, Silicon,

PJESDA5V6-5G_R2_00001 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
package instructionR-PDSO-F6
Reach Compliance Codecompliant
ECCN codeEAR99
Maximum breakdown voltage5.88 V
Minimum breakdown voltage5.32 V
ConfigurationCOMMON ANODE, 5 ELEMENTS
Diode component materialsSILICON
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 codeR-PDSO-F6
Maximum non-repetitive peak reverse power dissipation40 W
Number of components5
Number of terminals6
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
polarityUNIDIRECTIONAL
Maximum power dissipation0.3 W
GuidelineIEC-61000-4-2
Maximum repetitive peak reverse voltage3 V
surface mountYES
technologyAVALANCHE
Terminal formFLAT
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1

PJESDA5V6-5G_R2_00001 Preview

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PJESDA5V6-5G SERIES
QUAD ARRAY FOR ESD PROTECTION
SOT-563
0.011(0.27)
0.006(0.17)
Unit
inch(mm)
• Low Leakage < 1A@V
RWM
• Breakdown Voltage : 5.6Volt-6.7Volt@1mA
• ESD Protection Meeting IEC61000-4-2-Level 4
Lead free in
compliance
with EU RoHS
2011/65/EU
directives.
• Green molding compound as per IEC61249 Std. . (Halogen Free)
0.044(1.10)
0.035(0.90)
0.052(1.30)
0.043(1.10)
0.067(1.70)
0.059(1.50)
0.067(1.70)
0.059(1.50)
0.024(0.60)
0.019(0.50)
MECHANICAL DATA
Case : SOT-563, Plastic
Terminals : Solderable per MIL-STD-750, Method 2026
Approx. Weight : 0.003 grams
0.007(0.17)
0.002(0.07)
0.012(0.30)
0.004(0.10)
MAXIMUM RATINGS (T
A
=25
o
C unless otherwise noted)
Parameter
P e a k P o we r D i s s i p a ti o n (8 x2 0
s @ T
A
= 2 5
o
C )(No t e 1 )
S t e a d y S t a te P o we r- 1 D i o d e ( No t e 2 )
The r ma l Re s i s ta nc e J unc t i o n t o A m b i e nt A b o ve 2 5
o
C , D e ra t e
L e a d S o ld e r Te m p e ra t ure ( 1 0 s e c o nd s d ura t i o n)
O p e r a t i ng J unc t i o n a nd S t o ra g e Te m p e ra t ure R a ng e
Symbol
P
PK
P
D
R
JA
T
L
T
J
,T
S TG
Limits
40
300
370
2.7
260
-55 to +150
Unit
W
mW
C/W
mW/
o
C
o
o
C
C
o
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional
operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Condtions may affect device reliability.
ELECTRICAL CHARACTERISTICS (T
A
=25
o
C)
B re a k do wn Volta g e
V
B R
@1mA ( Vo lts )
Mi n
V
PJESDA5V6-5G
PJESDA6V2-5G
PJESDA6V8-5G
5.32
5.89
6.37
No m
V
5.6
6.2
6.7
Ma x
V
5.88
6.51
7.04
L e a k ag e C urre nt
I
RM
@V
RM
V
RWM
V
3.0
4.3
5.0
I
RWM
V
C
Ma x@I
P P
V
C
V
10
11
12
I
PP
A
5.0
4.5
4.0
Part Number
Ma x Capacitance
@0V Bias
(1MHz)
pF
45
40
35
Marking
A
1
1
1
SQ
ST
SU
1.Non-repetitive current per Figure 1.
2.Only 1 diode under power. For all 4 diodes under power, P
D
will be 25%. Mounted on FR-4 board with min pad
REV.0.1-JUN.11.2009
PAGE . 1
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