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PJESD6V8LC-4-R2-10001

Description
Transient Suppressor,
CategoryDiscrete semiconductor    diode   
ManufacturerPANJIT
Websitehttp://www.panjit.com.tw/

PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values ​​include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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PJESD6V8LC-4-R2-10001 Overview

Transient Suppressor,

PJESD6V8LC-4-R2-10001 Parametric

Parameter NameAttribute value
Reach Compliance Codecompliant
ECCN codeEAR99
Base Number Matches1

PJESD6V8LC-4-R2-10001 Preview

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PJESD5V6LC-4~PJESD6V8LC-4
FEATURES
• Based on the electrostatic discharge immunity test (IEC61000-4-2),
the product assures the minmum endurance of 8kV.
• Capacitance is small with 10pF (at V
R
=0V,f=1MHz) between the
terminal. It is excellent in the frequency characteristic.
• With 4 elements mouted (common anode) in the 5-pin mini mold
package, that product can cope with high density assembling.
Lead free in comply with EU RoHS 2002/95/EC directives.
• Green molding compound as per IEC61249 Std. . (Halogen Free)
0.119(3.00)
0.110(2.80)
0.075(1.90)
BSC
SOT23-5L
Unit
inch(mm)
0.009(0.22)
0.003(0.08)
MECHANICAL DATA
Case : SOT23-5L, Plastic
Terminals : Solderable per MIL-STD-750, Method 2026
0.057(1.45)
MAX.
0.020(0.50)
0.012(0.30)
0.051(1.30)
0.035(0.90)
0.006(0.15)
MAX.
Approx. Weight: 0.015 gram
MAXIMUM RATINGS
Rating
Peak Dissipation
Surge Reverse Power
Operating Junction and Storage Temperature Range
Symbol
P
P
RSM
T
J
,T
STG
Value
200
2
-55 to 150
Unit
mW
W
O
C
ELECTRICAL CHARACTERISITCS
B r e a k d o w n Vo lt a g e
V
BR
N o te 1
Part Number
MIN .
V
PJESD5V6LC-4
PJESD6V2LC-4
PJESD6V8LC-4
5.32
5.89
6.37
MAX .
V
5.88
6.51
7.04
I
T
mA
1
1
1
Dynamic
impedance Z
Z
(Ω )
MAX.
80
50
30
I
T
(m A)
5
5
5
Reverse
µ
Leakage I
R
(µ A)
MAX.
0.5
0.5
0.5
V
R
(V)
3.3
4.3
5.0
Capacitance Ct(p F )
Te s t
C o n d itio n
ESD Voltage (kV) Note 3
0.119(3.00)
0.102(2.60)
0.067(1.70)
0.059(1.50)
Marking
C ode
T Y P.
10
8
7
MIN .
8
Te s t C o n d i t i o n
C=150pF
R=300
Contact
discharge
SAT
SAU
SAV
V
R
=0V
f=1MH
Z
8
8
6
4
1
STAD-DEC.20.2007
2
3
PAGE . 1
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