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PJESD5V0Q4G

Description
QUAD TVS/ZENER ARRAY FOR ESD PROTECTION
File Size42KB,3 Pages
ManufacturerPANJIT
Websitehttp://www.panjit.com.tw/

PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values ​​include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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QUAD TVS/ZENER ARRAY FOR ESD PROTECTION

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PJESD5V0Q4G
QUAD TVS/ZENER ARRAY FOR ESD PROTECTION
This Quad TVS/Zener Array family have been designed to protect sensitive
equipment against ESD in CMOS circuitry operating at 5V. This TVS array offers an
integrated solution to protect up to 4 data lines in applications, where the board
space is a premium, in a Quad Flat no-Lead package that only occupies an area of
1.8 sq mm.
PRELIMINARY
SPECIFICATION FEATURES
IEC61000-4-2 ESD 20kV air, 15kV Contact Compliance
Low Leakage Current, Maximum of 1µA at rated voltage
Maximum Capacitance of 35pF per device at 0Vdc 1MHz
Peak Power Dissipation of 40W under 8/20µs Waveform
Quad Flat No Lead package QFN (1.2x1.5 sq mm, Height: 0.75mm)
Lead Free Package 100% Tin Plating, Matte finish
1
GND
2
3
1
APPLICATIONS
Personal Digital Assistant (PDA)
Digital Cameras
Portable Instrumentation
Mobile Phones and Accessories
MP3 Players
6
5
NC
4
MAXIMUM RATINGS (Per Device)
Rating
Peak Pulse Power (8/20µs Waveform)
Peak Pulse Current (8/20µs Waveform)
ESD Voltage (HBM Per MIL STD883C - Method 3015-6)
Operating Temperature Range
Storage Temperature Range
Symbol
P
PP
I
PPM
V
ESD
TJ
T
stg
Value
40
4.5
25
-55 to +150
-55 to +150
Units
W
A
kV
°C
°C
ELECTRICAL CHARACTERISTICS (Per Device)
Tj = 25°C
Parameter
Reverse Stand-Off Voltage
Reverse Breakdown Voltage
Reverse Leakage Current
Clamping Voltage (8/20µs)
Off State Junction Capacitance
Symbol
V
WRM
V
BR
I
R
V
c
Cj
I
BR
= 1mA
V
R
= 5V
I pp = 4A
0 Vdc Bias f = 1MHz
betweeen I/O lines and
Conditions
Min
Typical
Max
5
Units
V
V
6
1
8.81
30
9
35
µA
V
pF
12/16/2005
Page
1
www.panjit.com
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