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PG200_07

Description
2 A, 50 V, SILICON, RECTIFIER DIODE, DO-15
Categorysemiconductor    Discrete semiconductor   
File Size51KB,2 Pages
ManufacturerPANJIT
Websitehttp://www.panjit.com.tw/

PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values ​​include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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2 A, 50 V, SILICON, RECTIFIER DIODE, DO-15

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PG200~PG2010
GLASS PASSIVATED JUNCTION PLASTIC RECTIFIER
VOLTAGE
FEATURES
1.0(25.4)MIN.
50 to 1000 Volts
CURRENT
2.0 Amperes
DO-15
Unit: inch(mm)
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-O utilizing
Flame Retardant Epoxy Molding Compound.
• Glass passivated junction
• Exceeds environmental standards of MIL-S-19500/228
• In compliance with EU RoHS 2002/95/EC directives
.034(.86)
.028(.71)
.300(7.6)
MECHANICALDATA
Case: Molded plastic, DO-15
Terminals: Axial leads, solderable to MIL-STD-750,Method 2026
Polarity: Color Band denotes cathode end
Mounting Position: Any
Weight: 0.015 ounce, 0.4 gram
.230(5.8)
.140(3.6)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified. Resistive or inductive load, 60Hz.
PA RA M E TE R
M a xi m um R e c ur r e nt P e a k R e ve r s e V o l t a g e
M a xi m um R M S V o l t a g e
M a xi m um D C B l o c k i ng V o l t a g e
M a xi m um A ve r a g e F o r w a r d C ur r e nt . 3 7 5 " ( 9 . 5 m m )
l e a d l e ng t h a t T
A
= 5 5
O
C
P e a k F o r w a r d S ur g e C ur r e nt : 8 . 3 m s s i ng l e ha l f s i ne - w a ve
s up e r i m p o s e d o n r a t e d l o a d ( J E D E C m e t ho d )
M a xi m um F o r w a r d V o l t a g e a t 2 . 0 A
M a xi m um D C R e ve r s e C ur r e nt a t T
J
= 2 5
O
C
R a t e d D C B l o c k i ng V o l t a g e T
J
= 1 0 0
O
C
Ty p i c a l J u n c t i o n c a p a c i t a n c e ( N o t e 1 )
Ty p i c a l T h e r m a l R e s i s t a n c e ( N o t e 2 )
O p e r a t i n g a n d S t o r a g e Te m p e r a t u r e R a n g e T
J
, T
S TG
S YM B O L P G 2 0 0 P G 2 0 1 P G 2 0 2 P G 2 0 4 P G 2 0 6 P G 2 0 8 P G 2 0 1 0
V
RRM
V
RMS
V
DC
I
F ( A V )
I
F S M
V
F
I
R
C
J
R
θ
J A
R
θ
J L
T
J
, T
S TG
50
35
50
100
70
100
200
140
200
400
280
400
2 .0
70
1 .1
5
50
25
45
28
- 5 5 TO + 1 5 0
600
420
600
800
560
800
1000
700
1000
1.0(25.4)MIN.
.104(2.6)
U N IT S
V
V
V
A
A
V
uA
pF
O
C / W
O
C
NOTES:1. Measured at 1 MHz and applied reverse voltage of 4.0 VDC
2. Thermal resistance from junction to ambient and from junction to lead length 0.375"(9.5mm) P.C.B. mounted
STAD-MAR.13.2007
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