P6KE8.2 datasheet, PDF - EEWORLD Datasheet

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P6KE8.2: Descriptiontransient voltage suppression diode; CategoryDiscrete semiconductor diode; File Size179KB，5 Pages; ManufacturerYangzhou Yangjie Electronic Technology Co., Ltd.; Websitehttp://www.21yangjie.com/; Environmental Compliance; Yangzhou Yangjie Electronic Technology Co., Ltd. was established on August 2, 2006 with a registered capital of RMB 472 million. In January 2014, the company was listed on the Shenzhen Stock Exchange's Growth Enterprise Market with the stock code 300373. In 2017, the company's operating income was RMB 1.47 billion. The company integrates R&D, production and sales, and is professionally committed to the industrial development of power semiconductor chips and device manufacturing, integrated circuit packaging and testing, etc. The company's main products are various power electronic device chips, power diodes, rectifier bridges, high-power modules, DFN/QFN products, SGT MOS and silicon carbide SBD, silicon carbide JBS, etc. The products are widely used in many fields such as consumer electronics, security, industrial control, automotive electronics, and new energy.

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P6KE8.2 Overview

transient voltage suppression diode

Features

Product Name: Transient Voltage Suppressor Diode

Product model: P6KE8.2

product features:

Plastic package has Underwriters Laboratory Flammability Classification 94V-0

Exceeds environmental standards of MIL-STD-19500

600W surge capability at 10 x 100us waveform,duty cycle: 0.01%

Excellent clamping capability

Low zener impedance

Fast response time: Typically less than 1.0ps from 0 volts to VBR for unidirectional and 5.0 ns for bidirectional

Typical IR less than 1uA above 10V

High temperature soldering guaranteed:2500C/ 10 seconds/.375",(9.5mm) lead length / 5lbs.,(2.3kg) tension

Mechanical data:

Cases: Molded plastic

Epoxy:UL94V-0 rate flame retardant

Lead :Axial leads, solderable per MIL- STD-202, Method 208

Polarity: Color band denotes cathode except Bipolar

Weight: 0.34 gram

Maximum Ratings and Electrical Characteristics:

Rating at 25℃ ambient temperature unless otherwise specified.

product data:

Peak Power Dissipation at TA=25℃, TP=1ms PPK Forward power consumption: Minimun 600W

Steady State Power Dissipation at TL=25℃ PD stable power consumption: 2.0W

Peak Forward Surge Current IFSM Forward pulse current: 100A

Maximum Instaneous Forward Voltage at 50A for Unidirectional Only VF Forward Voltage Drop: 3.5 /5.0V

Operating and Storage Temperature Range Tj. Tstg Operating Junction Temperature: -55 to +175℃

Nominal Voltage: 8.2V

Breakdown Voltage V(BR) Breakdown Voltage: Min: 7.38V Max: 9.02V

Test Current at IT Test current: 10mA

Stand-Off Voltage Vwm Stand-Off Voltage: 6.63V

Max Reverse Leakage at Vwm ID Maximum reverse leakage current: 200uA

Max Peak Pulse Current IPPM Maximum peak pulse current: 50A

Max Clamping Voltage at IPPM VC 最大箝位电压：12.5V

Maximum Temperature Coefficient of VBR: 0.065%/℃

Package: DO-15

P6KE8.2 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Yangzhou Yangjie Electronic Technology Co., Ltd.
package instruction	O-PALF-W2
Reach Compliance Code	compli
Other features	EXCELLENT CLAMPING CAPABILITY, Bulk; 500
Maximum breakdown voltage	9.02 V
Minimum breakdown voltage	7.38 V
Breakdown voltage nominal value	8.2 V
Shell connection	ISOLATED
Maximum clamping voltage	12.5 V
Configuration	SINGLE
Diode component materials	SILICON
Diode type	TRANS VOLTAGE SUPPRESSOR DIODE
Maximum forward voltage (VF)	3.5 V
JEDEC-95 code	DO-204AC
JESD-30 code	O-PALF-W2
Maximum non-repetitive peak reverse power dissipation	600 W
Number of components	1
Number of terminals	2
Maximum operating temperature	150 °C
Minimum operating temperature	-55 °C
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	LONG FORM
polarity	UNIDIRECTIONAL
Maximum power dissipation	5 W
Maximum repetitive peak reverse voltage	6.63 V
Maximum reverse current	200 µA
Reverse test voltage	6.63 V
surface mount	NO
technology	AVALANCHE
Terminal form	WIRE
Terminal location	AXIAL

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