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MMBTA06W-R1-00001

Description
Transistor type: NPN Collector current Ic: 500mA Collector-emitter breakdown voltage Vce: 80V Rated power: 225mW NPN 80V 500mA
CategoryDiscrete semiconductor    triode   
File Size217KB,6 Pages
ManufacturerPANJIT
Websitehttp://www.panjit.com.tw/

PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values ​​include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

Download Datasheet Parametric View All

MMBTA06W-R1-00001 Overview

Transistor type: NPN Collector current Ic: 500mA Collector-emitter breakdown voltage Vce: 80V Rated power: 225mW NPN 80V 500mA

MMBTA06W-R1-00001 Parametric

Parameter NameAttribute value
Transistor typeNPN
Collector current Ic500mA
Collector-emitter breakdown voltage Vce80V
rated power225mW

MMBTA06W-R1-00001 Preview

Download Datasheet
PMMBTA06W
NPN High Voltage Transistor
Voltage
Features
80V
Power
225mW
NPN silicon, planar design
Collector current I
C
= 500mA
Lead free in compliance with EU RoHS 2011/65/EU
directive.
Green molding compound as per IEC61249 Std.
(Halogen Free)
Mechanical Data
Case: SOT-323 Package
Terminals: Solderable per MIL-STD-750, Method 2026
Approx. Weight: 0.00018 ounces, 0.005 grams
Marking: B06
Maximum Ratings and Thermal Characteristics
(T
A
=25 C unless otherwise noted)
PARAMETER
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current-Continuous
Maximum Power Dissipation ( Note 1)
Operating Junction and Storage Temperature Range
Typical Junction-to Ambient Thermal Resistance ( Note 1)
Note : 1. Mounted on a FR4 PCB, single-sided copper, mini pad.
o
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
D
T
J
,T
STG
R
θJA
LIMIT
UNITS
V
V
V
mA
mW
o
o
80
80
4
500
225
-55 to +150
550
C
C/W
December 2,2014-REV.00
Page 1
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