MMBT3904FN3 datasheet, PDF - EEWORLD Datasheet

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MMBT3904FN3: DescriptionRated power: 250mW Collector current Ic: 200mA Collector-emitter breakdown voltage Vce: 40V Transistor type: NPN NPN; CategoryDiscrete semiconductor The transistor; ManufacturerPANJIT; Websitehttp://www.panjit.com.tw/; Environmental Compliance; PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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MMBT3904FN3 Overview

Rated power: 250mW Collector current Ic: 200mA Collector-emitter breakdown voltage Vce: 40V Transistor type: NPN NPN

MMBT3904FN3 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	PANJIT
Parts packaging code	DFN
package instruction	ROHS COMPLIANT, PLASTIC, DFN-3
Contacts	3
Reach Compliance Code	compliant
ECCN code	EAR99
Maximum collector current (IC)	0.2 A
Collector-emitter maximum voltage	40 V
Configuration	SINGLE
Minimum DC current gain (hFE)	30
JESD-30 code	R-PBCC-N3
Number of components	1
Number of terminals	3
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	CHIP CARRIER
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	YES
Terminal form	NO LEAD
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Maximum off time (toff)	250 ns
Maximum opening time (tons)	70 ns

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MMBT3904FN3

NPN GENERAL PURPOSE SWITCHING TRANSISTOR

VOLTAGE

FEATURES

• Collector-emitter voltage VCE = 40V

• Collector current IC = 200mA

•

Lead free in compliance with EU RoHS 2011/65/EU directive

• Green molding compound as per IEC61249 Std. . (Halogen Free)

0.026(0.65)

0.022(0.55)

40 Volt

POWER

250 mWatt

DFN 3L

Unit

：

inch(mm)

0.042(1.05)

0.037(0.95)

• NPN epitaxial silicon, planar design

MECHANICAL DATA

•

Case: DFN 3L, Plastic

•

Terminals: Solderable per MIL-STD-750, Method 2026

•

Approx. Weight:

0.00004 ounces, 0.0011 grams

•

Marking: AC

0.022(0.55)

0.017(0.45)

0.002(0.05)MAX.

0.013(0.32)

0.009(0.22)

0.014(0.36)

0.013(0.32)

0.009(0.22)

0.008(0.20)

0.004(0.10)

0.022(0.55)

0.017(0.45)

Top view

ABSOLUTE RATINGS

0.014(0.36)

Parameter

Collector - E mitter Voltage

Collector - B ase Voltage

Emitter - B ase Voltage

Collector Current - C ontinuous

Symbol

CEO

CBO

EBO

Value

6.0

200

0.008(0.20)

0.004(0.10)

Units

THERMAL CHARACTERISTICS

Parameter

Max Power Dissipation (Note 1)

Thermal Resistance , Junction to Ambient

J unc ti o n Te m p e r a tur e

Op e r a ti ng Te m p e r a tur e

Symbol

TOT

R

S TG

Value

250

500

-5 5 t o + 1 5 0

Units

C/W

Note 1: Transistor mounted on FR-4 board 70 x 60 x 1mm.

PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE

May 6,2016REV.03

PAGE . 1

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