MMBT2907AE datasheet, PDF - EEWORLD Datasheet

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MMBT2907AE: DescriptionTransistor; CategoryDiscrete semiconductor The transistor; File Size198KB，4 Pages; ManufacturerJCET; Websitehttp://www.cj-elec.com/; Jiangsu Changdian Technology Co., Ltd. focuses on semiconductor packaging and testing business, providing customers at home and abroad with a full range of solutions such as chip testing, packaging design, packaging testing, etc. The company was successfully listed on the Shanghai Main Board in 2003, becoming the first semiconductor packaging and testing listed company in China. It now has a national enterprise technology center and a postdoctoral research workstation. It is a national key high-tech enterprise, a supporting unit of the National Engineering Laboratory for High-density Integrated Circuits, and the chairman unit of the Integrated Circuit Packaging Technology Innovation Strategic Alliance.

Discrete devices: diodes (switching diodes, Schottky diodes (Schottky rectifiers), voltage regulator diodes, Pin diodes, TVS diodes, rectifier diodes, fast recovery diodes); transistors (Darlington tubes, digital transistors, MOSFETs); thyristors: silicon-controlled rectifiers, triacs; composite tubes: transistors + field-effect tubes, dual transistors, dual digital transistors, digital transistors + transistors, transistors + diodes, field-effect tubes + diodes, dual field-effect tubes. Voltage regulator circuit; energy-saving lamp charger switch tube

Lead frame: TO series (TO); SOD series (SOD); SOT series (TSOT, SOT); FBP series (WBFBP); QFN series (QFNWB, DFNWB, DFNFC, QFNFC); QFP series (LQFP: PQFP: PLCC: TQFP); SIP series (SIP, HSIP, FSIP); SOP series (SOP, HSOP, SSOP, MSOP, HTSOP, TSSOP); DIP series (DIP, FDIP, SDIP); PDFN series; PQFN series; MIS series (MISFC, MISWB)

Nine core technologies: Through Silicon Via (TSV) packaging technology; SiP RF packaging technology; wafer-level 3D rewiring packaging process technology; copper bump interconnection technology; high-density FC-BGA packaging and testing technology (Flip Chip BGA); multi-turn array four-sided pinless packaging and testing technology; package body 3D stacking technology; 50μm or less ultra-thin chip 3D stacking packaging technology; MEMS multi-chip packaging technology; MIS packaging technology (pre-encapsulated interconnection system); BGA packaging technology, etc.

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Transistor

MMBT2907AE Parametric

Parameter Name	Attribute value
Maker	JCET
package instruction	,
Reach Compliance Code	unknown

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD

WBFBP-03A Plastic-Encapsulate Transistors

MMBT2907AE

TRANSISTOR

WBFBP-03A

(1.6×1.6×0.5)

unit: mm

DESCRIPTION

PNP Epitaxial planar type Silicon Transistor

FEATURES

Complementary NPN Type available(MMBT2222AE)

PPLICATION

general purpose amplifier, switching.

For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM,

DVD-ROM, Note book PC, etc.)

MARKING:2F

TOP

1. BASE

2. EMITTER

3. COLLECTOR

BACK

B E

MAXIMUM RATINGS

=25℃ unless otherwise noted

Symbol

Parameter

Value

CBO

Collector-Base Voltage

-60

CEO

-60

Collector-Emitter Voltage

EBO

-5

Emitter-Base Voltage

Collector Current -Continuous

-600

Collector Dissipation

150

Junction Temperature

150

stg

Storage Temperature

-55to+150

ELECTRICAL CHARACTERISTICS（Tamb=25℃

Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Emitter cut-off current

Symbol

(BR)CBO

(BR)CEO

(BR)EBO

CBO

EBO

FE(1)

FE(2)

DC current gain

FE(3)

FE(4)

FE(5)

Collector-emitter saturation voltage

Base-emitter saturation voltage

Transition frequency

Collector output capacitance

Noise figure

(sat)

Units

℃

unless

Test

otherwise

specified）

MIN

-60

-5

-0.01

100

-1.6

-0.4

-2.6

-1.3

200

MHz

300

TYP

MAX

UNIT

conditions

= -10

A,I

= -10mA, I

=-10

A,I

=-50 V,I

= -5V,I

=-10V,I

=-0.1mA

=-10V,I

=-1mA

=-10V,I

=-10mA

=-10V,I

=-150mA

=-10V,I

=-500mA

=-500mA,I

=-50mA

=-150mA,I

=-15mA

=-500mA,I

=-50mA

=-150mA,I

=-15mA

=-20V, I

=-50mA

100MHz

=-10V, I

, f=

=-5V,I

=-0.1mA,

f=1KHz,Rs=1KΩ

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