Plastic-Encapsulate Transistors
FEATURES
Epitaxial planar die construction
Complementary PNP Type available(MMBT2907A)
MMBT2222A
(NPN)
MARKING
:
1P
unless otherwise noted)
MAXIMUM RATINGS (TA=25
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Symbol
V
CBO
V
CEO
V
EBO
I
C
Value
75
40
6
0.6
0.25
150
-55 to +150
Unit
V
V
V
A
W
1. BASE
2. EMITTER
3. COLLECTO
SOT-23
Collector Power Dissipation
Junction Temperature
Storage Temperature
P
C
T
J
Tstg
ELECTRICAL CHARACTERISTICS (Tamb=25
unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
Symbol
VCBO
VCEO
VEBO
ICB
O
ICE
X
IEB
O
hFE(1)
Test
conditions
Min
75
40
6
Typ
Max
Unit
V
V
V
IC= 10μA, IE=0
IC= 10mA, IB=0
IE=10μA, IC=0
VCB=60V, IE=0
VCE=30V,VBE(off)=3V
VEB= 3V, IC=0
VCE=10V, IC= 150mA
VCE=10V, IC= 0.1mA
VCE=10V, IC= 500mA
IC=500 mA,IB= 50mA
IC=150 mA, IB=15mA
IC=500 mA,IB= 50mA
IC=150 mA, IB=15mA
VCE=20V, IC= 20mA,
f=100MHz
VCC=30V, VBE(off)=-0.5V
IC=150mA , IB1= 15mA
VCC=30V, IC=150mA
IB1=-IB2=15mA
0.01
0.01
0.1
100
40
42
1
0.3
2.0
1.2
300
10
25
225
60
300
μA
μA
μA
DC current gain
hFE(2)
hFE(3)
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Delay time
Rise time
Storage time
Fall time
VCE(sat)
*
VBE(sat)
*
f
T
td
tr
tS
tf
V
V
MHz
nS
nS
nS
nS
GUANGDONG HOTTECH
INDUSTRIAL CO., LTD
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