LITE-ON
SEMICONDUCTOR
MBR1070CT thru 10100CT
REVERSE VOLTAGE
- 70
to
100
Volts
FORWARD CURRENT
- 10
Amperes
SCHOTTKY BARRIER RECTIFIERS
FEATURES
Metal of silicon rectifier,majority carrier conducton
Guard ring for transient protection
Low power loss, high efficiency
High current capability, low VF
High surge capacity
Plastic package has UL flammability classification 94V-0
For use in low voltage,high frequency inverters,free
whelling,and polarity protection applications
B
C
K
PIN
1
2
3
TO-220AB
L
M
D
A
E
TO-220AB
MAX.
MIN.
DIM.
14.22
15.88
A
9.65
10.67
B
C
2.54
3.43
D
5.84
6.86
9.28
8.26
E
F
G
H
-
12.70
6.35
14.73
F
G
MECHANICAL DATA
Case : TO-220AB molded plastic
Polarity : As marked on the body
Weight : 0.08 ounces, 2.24 grams
Mounting position : Any
I
J
N
H H
PIN 1
PIN 3
PIN 2
CASE
2.29
2.79
1.14
0.51
I
J
0.30
0.64
K
3.53
4.09
3.56
4.83
L
M
1.14
1.40
2.92
2.03
N
All Dimensions in millimeter
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
℃
ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
CHARACTERISTICS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward RectifiedCurrent
at T
C
=100 C (See Fig.1)
Peak Forward Surge Current
8.3ms single half sine-wave
superimposed on rated load (JEDEC METHOD)
Voltage Rate of Change (Rated VR)
Maximum Forward
Voltage, (Note 1)
SYMBOL
MBR1070CT
70
49
70
MBR1080CT
80
56
80
10
120
MBR1090CT
90
63
90
MBR10100CT
100
70
100
UNIT
V
V
V
A
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
dv/dt
A
V/us
10000
0.85
0.75
0.95
0.85
0.1
15
300
3.0
-55 to +150
-55 to +175
@I
F
=5A
@I
F
=5A
@I
F
=10A
@I
F
=10A
T
J
=25 C
T
J
=125 C
T
J
=25 C
T
J
=125 C
V
F
V
Maximum DC Reverse Current
at Rated DC Blocking Voltage
Typical Junction Capacitance,
per element (Note 2)
@T
J
=25 C
@T
J
=125 C
I
R
C
J
R
0JC
T
J
T
STG
mA
pF
C/W
C
C
Typical Thermal Resistance (Note 3)
Operating Temperature Range
Storage Temperature Range
NOTES : 1. 300us Pulse Width, 2% Duty Cycle.
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
3. Thermal Resistance Junction to Case.
REV. 2, 13-Sep-2001, KTHC13
RATING AND CHARACTERISTIC CURVES
MBR1070CT thru MBR10100CT
AVERAGE FORWARD CURRENT
AMPERES
10
PEAK FORWARD SURGE CURRENT,
AMPERES
FIG.1 - FORWARD CURRENT DERATING CURVE
FIG.2 - MAXIMUM NON-REPETITIVE SURGE CURRENT
120
100
80
60
40
20
0
1
2
5
10
20
50
100
8
6
4
2
RESISTIVE OR INDUCTIVE LOAD
8.3ms Single Half-Sine-Wave
(JEDEC METHOD)
0
25
50
75
100
125
150
175
CASE TEMPERATURE , C
NUMBER OF CYCLES AT 60Hz
FIG.3 - TYPICAL REVERSE CHARACTERISTICS
100
FIG.4 - TYPICAL FORWARD CHARACTERISTICS
100
INSTANTANEOUS FORWARD CURRENT ,(A)
INSTANTANEOUS
REVERSE CURRENT ,(mA)
T
J
= 100 C
10
10
1.0
T
J
= 75 C
0.1
1.0
0.01
T
J
= 25 C
T
J
= 25 C
PULSE WIDTH 300us
2% Duty cycle
0.001
0
20
40
60
80
100
120
140
0.1
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
PERCENT OF RATED PEAK REVERSE VOLTAGE ,(%)
INSTANTANEOUS FORWARD VOLTAGE , VOLTS
FIG.5 - TYPICAL JUNCTION CAPACITANCE
1000
CAPACITANCE , (pF)
100
T
J
= 25 C, f= 1MHz
10
0.1
1
4
10
100
REVERSE VOLTAGE , VOLTS
REV. 2, 13-Sep-2001, KTHC13
Parametric
View All
FPGA/CPLD
京公网安备 11010802033920号
EEWORLD
