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MBR1050FCT_T0_10001

Description
Rectifier Diode, Schottky, 1 Phase, 2 Element, 5A, 50V V(RRM), Silicon, TO-220AB, ITO-220AB, 3 PIN
CategoryDiscrete semiconductor    diode   
File Size247KB,4 Pages
ManufacturerPANJIT
Websitehttp://www.panjit.com.tw/
Environmental Compliance

PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values ​​include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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MBR1050FCT_T0_10001 Overview

Rectifier Diode, Schottky, 1 Phase, 2 Element, 5A, 50V V(RRM), Silicon, TO-220AB, ITO-220AB, 3 PIN

MBR1050FCT_T0_10001 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
package instructionITO-220AB, 3 PIN
Reach Compliance Codenot_compliant
ECCN codeEAR99
Other featuresFREE WHEELING DIODE, LOW POWER LOSS
applicationEFFICIENCY
Shell connectionISOLATED
ConfigurationCOMMON CATHODE, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.75 V
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
Maximum non-repetitive peak forward current150 A
Number of components2
Phase1
Number of terminals3
Maximum operating temperature175 °C
Minimum operating temperature-65 °C
Maximum output current5 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum repetitive peak reverse voltage50 V
Maximum reverse current50 µA
surface mountNO
technologySCHOTTKY
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1

MBR1050FCT_T0_10001 Preview

Download Datasheet
MBR1040FCT SERIES
10 AMPERE SCHOTTKY BARRIER RECTIFIERS
VOLTAGE
FEATURES
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-O.
Flame Retardant Epoxy Molding Compound.
• Low power loss, high efficiency.
• High current capability
• For use in low voltage,high frequency inverters
free wheeling , and polarlity protection applications.
• Lead free in compliance with EU RoHS 2011/65/EU directive
0.606(15.4)
0.583(14.8)
0.128(3.25)
MIN.
0.114(2.9)
0.098(2.5)
0.027(0.67)
0.022(0.57)
0.112(2.85)
0.100(2.55)
0.272(6.9)
0.248(6.3)
0.406(10.3)
0.381(9.7)
0.134(3.4)
0.118(3.0)
0.189(4.8)
0.165(4.2)
0.130(3.3)
0.114(2.9)
40 to 200 Volt
CURRENT
10 Ampere
MECHANICAL DATA
• Case: ITO-220AB molded plastic
• Terminals: solder plated, solderable per MIL-STD-750, Method 2026
• Polarity: As marked.
• Weight: 0.056 ounces, 1.6 grams
0.055(1.4)
0.039(1.0)
0.055(1.4)
0.039(1.0)
0.028(0.7)
0.019(0.5)
0.100(2.55)
0.100(2.55)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
PARAM ETER
M aximum Recurrent Peak Revers e Volt age
M aximum RM S Volt age
M aximum DC Block ing Volt age
M aximum Average Forw ard Cur rent
( See f ig. 1)
Peak Forw ar d Surge Current : 8. 3ms single
half sine- w ave s uperimposed on rat ed load
M aximum Forw ard Volt age at 5A, per leg
M aximum DC Rever se Curr ent T
J
=25
O
C
at Rat ed DC Block ing Volt age T
J
= 125
O
C
Typical Ther mal Res ist ance
O perat ing and St or age J unct ion
Temperat ur e Range
SY M BO L
V
RRM
V
RM S
V
DC
I
F( AV)
I
FSM
V
F
0.177(4.5)
0.137(3.5)
0.543(13.8)
0.512(13.0)
M BR1040FCT M BR1045FCT M BR1050FCT M BR1060FCT MBR1080FCT MBR1090FCT MBR10100FCT M BR10150FCT MBR10200FCT
UNI TS
V
V
V
A
A
40
28
40
45
31. 5
45
50
35
50
60
42
60
80
56
80
10
150
90
63
90
100
70
100
150
105
150
200
140
200
0. 7
0. 75
0. 05
20
2
0. 8
0.9
V
I
R
mA
R
Θ
JC
T
J
, T
STG
- 55 to + 150
O
C/ W
O
-65 t o + 175
C
Notes :
Both Bonding and Chip structure are available.
April 19,2016-REV.07
PAGE . 1
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