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MBR1035FCT

Description
Rectifier Diode,
CategoryDiscrete semiconductor    diode   
File Size147KB,3 Pages
ManufacturerYangzhou Yangjie Electronic Technology Co., Ltd.
Websitehttp://www.21yangjie.com/
Environmental Compliance
Yangzhou Yangjie Electronic Technology Co., Ltd. was established on August 2, 2006 with a registered capital of RMB 472 million. In January 2014, the company was listed on the Shenzhen Stock Exchange's Growth Enterprise Market with the stock code 300373. In 2017, the company's operating income was RMB 1.47 billion. The company integrates R&D, production and sales, and is professionally committed to the industrial development of power semiconductor chips and device manufacturing, integrated circuit packaging and testing, etc. The company's main products are various power electronic device chips, power diodes, rectifier bridges, high-power modules, DFN/QFN products, SGT MOS and silicon carbide SBD, silicon carbide JBS, etc. The products are widely used in many fields such as consumer electronics, security, industrial control, automotive electronics, and new energy.
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MBR1035FCT Overview

Rectifier Diode,

MBR1035FCT Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerYangzhou Yangjie Electronic Technology Co., Ltd.
Reach Compliance Codecompli

MBR1035FCT Preview

MBR1020FCT THRU MBR1060FCT 
 
RoHS
COMPLIANT
Schottky Diodes
Features
High frequency operation
Low forward voltage drop
High purity, high temperature epoxy encapsulation for
enhanced mechanical strength and moisture resistance
Guard ring for enhanced ruggedness and long term reliability
Solder dip 275 °C max. 7 s, per JESD 22-B106
Typical Applications
Typical applications are in switching power supplies, converters,
freewheeling diodes, and reverse battery protection.
Mechanical Data
Package:
ITO-220AB
Molding compound meets UL 94 V-0 flammability
rating, RoHS-compliant
Terminals:
Tin plated leads, solderable per J-STD-
002 and JESD22-B102
Polarity:
As marked
Maximum Ratings
(Ta=25℃ Unless otherwise specified
PARAMETER
Device marking code
Repetitive Peak Reverse Voltage
Average Rectified Output Current @60Hz sine
wave, R-load, Ta=25℃
Surge(Non-repetitive)Forward Current @60Hz
half sine-wave, 1 cycle, Ta=25℃
Current Squared Time @1ms≤t<8.3ms
Tj=25℃,
Storage Temperature
Junction Temperature
VRRM
IO
IFSM
I
2
t
Tstg
Tj
V
A
A
As
-55 ~ +125
2
SYMBOL UNIT
MBR1020FCT MBR1035FCT
MBR1020FCT
20
MBR1035FCT
35
MBR1045FCT
MBR1045FCT
45
10
100
41
-55 ~ +150
MBR1050FCT
MBR1050FCT
50
MBR1060FCT
MBR1060FCT
60
-55 ~ +150
■Electrical
Characteristics
(T
a=25℃ Unless otherwise specified)
PARAMETER
Maximum instantaneous forward
voltage drop per diode
Maximum DC reverse current
at rated DC blocking voltage per
diode
SYMBOL UNIT
VFM
IRRM1
mA
IRRM2
V
TEST
CONDITIONS
IFM=5.0A
VRM=VRRM
Ta=25℃
VRM=VRRM
Ta=100℃
MBR1020FCT
MBR1035FCT
MBR1045FCT
MBR1050FCT
MBR1060FCT
0.55
0.2
20
0.75
1/3
S-B088
Rev.2.0, 29-Nov-14
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com
MBR1020FCT THRU MBR1060FCT 
 
Thermal Characteristics
(T
a=25℃ Unless otherwise specified)
PARAMETER
Thermal
Resistance
Between
junction
and case
SYMBOL
UNIT
MBR1020FCT MBR1035FCT
MBR1040FCT
MBR1050FCT
MBR1060FCT
R
θJ-C
℃/W
4.0
Ordering Information
(Example)
PREFERED P/N
MBR1020FCT THRU MBR1060FCT
UNIT WEIGHT(g)
Approximate 1.6
MINIIMUM
PACKAGE(pcs)
50
INNER BOX
QUANTITY(pcs)
1000
OUTER CARTON
QUANTITY(pcs)
5000
DELIVERY MODE
Tube
Characteristics
(Typical)
FIG1:Io -Tc Curve
Average Forward Output Current (A)
14.0
12.0
10.0
8.0
6.0
4.0
2.0
0
0
50
100
V
~45
20V
Peak Forward Surge Current (A)
140
120
100
80
60
40
20
1
2
5
10
20
50
100
FIG2:Surge Forward Current Capability
TC measure point
IN DC
V
~60
50V
8.3ms Single
Half Sine-Wave
JEDEC Method
150
Case Temperature
(℃)
Number of Cycles
FIG3: Forward Voltage
100
100
FIG.4: Typical Reverse Characteristics
20
10
5.0
20V~45V
Instantaneous Reverse Current (mA)
60
Instantaneous Forward Current (A)
10
Tj=100
1.0
1.0
0.5
0.2
0.1
0
0.1
0.2
0.3
0.4
0.5
0.6
50V~60V
0.1
Tj=25
0.01
Ta=25
0.7
0.8
0.9
1.0
1.1
1.2
0.001
0
20
40
60
80
100
Instantaneous Forward Voltage (V)
Percent of Rated Peak Reverse Voltage (%)
2/3
S-B088
Rev.2.0, 29-Nov-14
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com
MBR1020FCT THRU MBR1060FCT 
 
■Outline
Dimensions
ITO220AB
A
B
C
K
ITO-220AB
M
Dim
A
B
C
Min
9.7
2.15
2.6
14.4
3.1
0.4
0.4
12.7
1.80
1.4
2.1
2.1
3.9
Max
10.7
3.25
3.8
15.9
4.5
0.8
0.8
14.2
2.95
1.8
3.56
3.2
5.1
D
D
E
F
E
G
I
J
L
H
F
G
H
I
J
K
L
M
Dimensions in millimeters
Disclaimer
The information presented in this document is for reference only. Yangzhou Yangjie Electronic Technology Co., Ltd. reserves the
right to make changes without notice for the specification of the products displayed herein to improve reliability, function or design
or otherwise.
The product listed herein is designed to be used with ordinary electronic equipment or devices, and not designed to be used with
equipment or devices which require high level of reliability and the malfunction of with would directly endanger human life (such as
medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety
devices), Yangjie or anyone on its behalf, assumes no responsibility or liability for any damages resulting from such improper use
of sale.
This publication supersedes & replaces all information previously supplied. For additional information, please visit our website
http://
www.21yangjie.com
, or consult your nearest Yangjie’s sales office for further assistance.
3/3
S-B088
Rev.2.0, 29-Nov-14
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com
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