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MA729

CategoryDiscrete semiconductor    Schottky diode   
File Size590KB,3 Pages
ManufacturerSHIKUES
Websitehttp://www.shike.tw
Shike, originated from Taiwan, China, is one of the world's leading semiconductor discrete component manufacturers. It mainly provides engineers and designers with various semiconductor products and software, bringing better sensory experience to products such as automobiles, communications, computers, consumer electronics, industry, LED lighting, medical and power applications. Since its establishment, under the guidance of the core concept of "making products have good cores", with safety, low energy consumption and high performance as its purpose, Shike Semiconductor's R&D strategy has never wavered. Nearly a quarter of its employees work in the field of R&D and product design, and annual R&D expenses account for about 22% of total revenue. In addition, with the hard work of young, dream-filled and passionate employees, Shike has developed rapidly, and its products are exported to North America, Europe and the Asia-Pacific region. It is considered one of the most innovative companies in the semiconductor industry. Shike will continue to optimize in terms of safety, energy consumption and performance, and more flexibly meet the needs of design engineers and the ever-changing market. From concept design to production and manufacturing, we will provide full support. Looking to the future, we will focus on innovation and continue to create value for our customers, employees and society as a whole. By reducing energy consumption, improving safety and enhancing performance, we will focus on how to use technological research and development to improve the quality of life of the public. We will go all out to fulfill our commitments.
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MA729
Surface Mount Schottky Barrier Diodes
Features
• Low Forward Voltage
PINNING
PIN
1
2
1
DESCRIPTION
Cathode
Anode
2
Top View
Marking Code:
2B
Simplified outline SOD-323 and symbol
Absolute Maximum Ratings
(T
a
= 25 C)
O
Parameter
Peak Repetitive Reverse Voltage
Reverse Voltage
Symbol
V
RRM
V
R
I
F(AV)
I
FSM
P
tot
T
j
, T
stg
Value
30
30
300
2
200
- 65 to + 125
Unit
V
V
mA
A
mW
O
Average Forward Rectified Current
Non-Repetitive Peak Forward Surge Current at t = 1 s
Power Dissipation
Operating and Storage Temperature Range
C
Characteristics at
T
a
= 25 C
O
Parameter
Reverse Breakdown Voltage
at I
R
= 10 ÿA
Reverse Leakage Current
at V
R
= 30 V
Symbol
V
(BR)R
Min.
Typ.
Max.
Unit
V
30
I
R
-
-
-
-
5
µA
Forward Voltage
at I
F
= 20 mA
at I
F
= 200 mA
Total Capacitance
at V
R
= 0 V, f = 1 MHz
Reverse Recovery Time
at I
F
= I
R
= 200 mA, I
rr
= 0.1 I
R
, R
L
= 100
V
F
C
T
t
rr
-
-
-
-
-
-
50
10
0.37
0.6
-
-
V
pF
ns
REV.08
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