WMF512K8-XXX5
512Kx8 MONOLITHIC NOR FLASH (SMD 5962-96692*)
FEATURES
Access Times of 60, 70, 90, 120, 150ns
Packaging
• 32 pin, Hermetic Ceramic, 0.600" DIP
(Package 300)
• 32 lead, Hermetic Ceramic, 0.400" SOJ
(Package 101)
• 32 pin, Rectangular Ceramic Leadless Chip Carrier
(Package 601)
• 32 lead Flatpack (Package 220)
100,000 Erase/Program Cycles Minimum
Sector Erase Architecture
• 8 equal size sectors of 64K bytes each
• Any combination of sectors can be concurrently erased.
Also supports full chip erase
Organized as 512Kx8
Commercial, Industrial and Military Temperature Ranges
5 Volt Programming.
Low Power CMOS
Embedded Erase and Program Algorithms
TTL Compatible Inputs and CMOS Outputs
Page Program Operation and Internal Program Control
Time.
Note: For programming information and waveforms refer to Flash Programming 4M5 Application
Note AN0037.
This product is subject to change without notice.
* For reference only – see table on page 9
PIN CONFIGURATION FOR WMF512K8-XXX5
32 DIP
32 CSOJ
32 FLATPACK
PIN CONFIGURATION FOR WMF512K8-XCLX5
32 CLCC
TOP VIEW
A18
A16
A15
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
I/O1
I/O2
V
SS
TOP VIEW
V
CC
WE#
A17
A14
A13
A8
A9
A11
OE#
A10
CS#
I/O7
I/O6
I/O5
I/O4
I/O3
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
WE#
A12
A15
A16
A18
4 3 2 1 32 31 30
A7
A6
A5
A4
A3
A2
A1
A0
I/O
0
29
5
28
6
27
7
26
8
25
9
24
10
23
11
22
12
21
13
14 15 16 17 18 19 20
I/O1
I/O2
I/O3
I/O4
I/O5
I/O6
V
SS
A14
A13
A8
A9
A11
OE#
A10
CS#
I/O7
PIN DESCRIPTION
A
0
-
18
I/O
0-7
CS#
OE#
WE#
V
CC
V
SS
Address Inputs
Data Input/Output
Chip Select
Output Enable
Write Enable
+5.0V Power
Ground
Microsemi Corporation reserves the right to change products or specifications without notice.
May 2012
Rev. 9
© 2012 Microsemi Corporation. All rights reserved.
1
Microsemi Corporation • (602) 437-1520 • www.microsemi.com
A17
V
CC
WMF512K8-XXX5
ABSOLUTE MAXIMUM RATINGS (1)
Parameter
Operating Temperature (Mil.)
Supply Voltage (V
CC
) (1)
Signal Voltage Range(any pin except A9) (2)
Storage Temperature Range
Lead Temperature (soldering, 10 seconds)
Data Retention Mil Temp
Endurance - erase/program cycle
A9 Voltage for sector protect (V
ID
) (3)
-55 to +125
-2.0 to +7.0
-2.0 to +7.0
-65 to +150
+300
20
100,000 min
-2.0 to +12.5
Unit
°C
V
V
°C
°C
years
cycles
V
RECOMMENDED OPERATING CONDITIONS
Parameter
Supply Voltage
Operating Temp. (Mil.)
Operating Temp. (Ind.)
Operating Temp. (Com.)
Symbol
V
CC
T
A
T
A
T
A
Min
4.5
-55
-40
0
Max
5.5
+125
+85
+70
Unit
V
°C
°C
°C
CAPACITANCE
T
A
= +25°C
Parameter
Address Input capacitance
Output Enable capacitance
Write Enable capacitance
Chip Select capacitance
Data I/O capacitance
Symbol
CAD
COE
CWE
CCS
CI/O
Conditions
VI/O = 0 V, f = 1.0 MHz
VIN = 0 V, f = 1.0 MHz
VIN = 0 V, f = 1.0 MHz
VIN = 0 V, f = 1.0 MHz
VI/O = 0 V, f = 1.0 MHz
Max
15
15
15
15
15
Unit
pF
pF
pF
pF
pF
NOTES:
1. Stresses above the absolute maximum rating may cause permanent damage to the device.
Extended operation at the maximum levels may degrade performance and affect reliability.
2. Minimum DC voltage on input or I/O pins is -0.5V. During voltage transitions, inputs may
overshoot V
SS
to -2.0 V for periods of up to 20ns. Maximum DC voltage on output and I/O pins
is V
CC
+ 0.5V. During voltage transitions, outputs may overshoot to Vcc + 2.0 V for periods of up
to 20ns.
3. Minimum DC input voltage on A9 pin is -0.5V. During voltage transitions, A9 may overshoot
Vss to -2V for periods of up to 20ns. Maximum DC input voltage on A9 is +12.5V which may
overshoot to 13.5 V for periods up to 20ns.
This parameter is guaranteed by design but not tested.
DC CHARACTERISTICS – CMOS COMPATIBLE
Parameter
Input Leakage Current
Output Leakage Current
V
CC
Active Current for Read (1, 2)
V
CC
Active Current for Program or Erase (2, 3)
V
CC
Standby Current (2)
Input High Voltage
Input Low Voltage
A9 Voltage for Sector Protect
Output Low Voltage
Output High Voltage
Low V
CC
Lock-Out Voltage
Symbol
I
LI
I
LO
I
CC1
I
CC2
I
SB
V
IH
V
IL
V
ID
V
OL
V
OH1
V
LKO
Conditions
V
CC
= V
CC MAX
, V
IN
= GND to V
CC
V
CC
= V
CC MAX
, V
OUT
= GND to V
CC
CS# = V
IL
, OE# = V
IH
, f = 5MHz
CS# = V
IL
, OE# = V
IH
CS# = V
CC
± 0.5V, f = 5MHz
Min
Max
10
10
35
50
1.6
V
CC
+ 0.3
+0.8
12.5
0.45
4.2
Unit
μA
μA
mA
mA
mA
V
V
V
V
V
V
2.0
-0.5
11.5
I
OL
= 8.0 mA, V
CC
= V
CC MIN
I
OH
= -2.5 mA, V
CC
= V
CC MIN
0.85 x V
CC
3.2
NOTES:
1. The I
CC
current listed includes both the DC operating current and the frequency dependent component (at 5 MHz).
The frequency component typically is less than 2mA/MHz, with OE# at V
IH
.
2. Maximum current specifications are tested with
V
CC
= V
CC MAX
3. I
CC
active while Embedded Algorithm (program or erase) is in progress.
Microsemi Corporation reserves the right to change products or specifications without notice.
May 2012
Rev. 9
© 2012 Microsemi Corporation. All rights reserved.
2
Microsemi Corporation • (602) 437-1520 • www.microsemi.com
WMF512K8-XXX5
AC CHARACTERISTICS – WRITE/ERASE/PROGRAM OPERATIONS, CS# CONTROLLED
Parameter
Write Cycle Time
Write Enable Setup Time
Chip Select Pulse Width
Address Setup Time
Data Setup Time
Data Hold Time
Address Hold Time
Chip Select Pulse Width High
Duration of Byte Programming Operation (1)
Sector Erase Time (2)
Read Recovery Time
Chip Programming Time
Chip Erase Time (3)
NOTES:
1. Typical value for t
WHWH1
is 7μs.
2. Typical value for t
WHWH2
is 1sec.
3. Typical value for Chip Erase time is 8sec.
Symbol
t
AVAV
t
WLEL
t
ELEH
t
AVEL
t
DVEH
t
EHDX
t
ELAX
t
EHEL
t
WHWH1
t
WHWH2
t
GHEL
t
WC
t
WS
t
CP
t
AS
t
DS
t
DH
t
AH
t
CPH
-60
Min
60
0
40
0
40
0
45
20
Max
Min
70
0
45
0
45
0
45
20
-70
Max
Min
90
0
45
0
45
0
45
20
-90
Max
Min
120
0
50
0
50
0
50
20
-120
Max
Min
150
0
50
0
50
0
50
20
-150
Max
Unit
ns
ns
ns
ns
ns
ns
ns
ns
μs
sec
ns
sec
sec
300
15
0
11
64
0
300
15
0
11
64
300
15
0
11
64
300
15
0
11
64
300
15
11
64
AC TEST CIRCUIT
AC Test Conditions
Parameter
Input Pulse Levels
Input Rise and Fall
Input and Output Reference Level
Output Timing Reference Level
NOTES:
V
Z
is programmable from -2V to +7V.
I
OL
& I
OH
programmable from 0 to 16mA.
Tester Impedance Z
0
= 75
.
V
Z
is typically the midpoint of V
OH
and V
OL
.
I
OL
& I
OH
are adjusted to simulate a typical resistive load circuit.
ATE tester includes jig capacitance.
I
OL
Current Source
Typ
V
IL
= 0, V
IH
= 3.0
5
1.5
1.5
Unit
V
ns
V
V
D.U.T.
C
eff
= 50 pf
V
Z
≈ 1.5V
(Bipolar Supply)
I
OH
Current Source
Microsemi Corporation reserves the right to change products or specifications without notice.
May 2012
Rev. 9
© 2012 Microsemi Corporation. All rights reserved.
3
Microsemi Corporation • (602) 437-1520 • www.microsemi.com
WMF512K8-XXX5
AC CHARACTERISTICS – WRITE/ERASE/PROGRAM OPERATIONS, WE# CONTROLLED
Parameter
Write Cycle Time
Chip Select Setup Time
Write Enable Pulse Width
Address Setup Time
Data Setup Time
Data Hold Time
Address Hold Time
Write Enable Pulse Width High
Duration of Byte Programming Operation (1)
Sector Erase Time (2)
Read Recovery Time before Write
VCC Set-up Time
Chip Programming Time
Output Enable Setup Time
Output Enable Hold Time (4)
Chip Erase Time (3)
NOTES:
1. Typical value for t
WHWH1
is 7μs.
2. Typical value for t
WHWH2
is 1sec.
3. Typical value for Chip Erase time is 8sec.
4. For Toggle and Data# Polling.
Symbol
t
AVAV
t
ELWL
t
WLWH
t
AVWH
t
DVWH
t
WHDX
t
WHAX
t
WHWL
t
WHWH1
t
WHWH2
t
GHWL
t
WC
t
CS
t
WP
t
AS
t
DS
t
DH
t
AH
t
WPH
-60
Min
60
0
40
0
40
0
45
20
Max
Min
70
0
45
0
45
0
45
20
-70
Max
Min
90
0
45
0
45
0
45
20
-90
Max
Min
120
0
50
0
50
0
50
20
-120
Max
Min
150
0
50
0
50
0
50
20
-150
Max
Unit
ns
ns
ns
ns
ns
ns
ns
ns
μs
sec
ms
μs
sec
ns
ns
sec
300
15
t
VCS
t
OES
t
OEH
0
50
11
0
10
64
0
10
0
50
300
15
0
50
11
0
10
64
300
15
0
50
11
0
10
64
300
15
0
50
11
0
10
64
300
15
11
64
AC CHARACTERISTICS – READ ONLY OPERATIONS
Parameter
Read Cycle Time
Address Access Time
Chip Select Access Time
Output Enable to Output Valid
Chip Select to Output High Z (1)
Output Enable High to Output High Z (1)
Output Hold from Address, CS# or OE# Change,
whichever is First
NOTE:
1. Guaranteed by design, but not tested
Symbol
t
AVAV
t
AVQV
t
ELQV
t
GLQV
t
EHQZ
t
GHQZ
t
AXQX
t
RC
t
ACC
t
CE
t
OE
t
DF
t
DF
t
OH
-60
Min
60
60
60
30
20
20
0
Max
-70
Min
70
70
70
35
20
20
0
Max
-90
Min
90
90
90
35
20
20
0
Max
-120
Min
120
120
120
50
30
30
0
Max
-150
Min
150
150
150
55
35
35
0
Max
Unit
ns
ns
ns
ns
ns
ns
ns
Microsemi Corporation reserves the right to change products or specifications without notice.
May 2012
Rev. 9
© 2012 Microsemi Corporation. All rights reserved.
4
Microsemi Corporation • (602) 437-1520 • www.microsemi.com
WMF512K8-XXX5
PACKAGE 101 – 32 LEAD, CERAMIC SOJ
21.1 (0.830) ± 0.25 (0.010)
0.2 (0.008)
± 0.05 (0.002)
3.96 (0.156) MAX
0.89 (0.035)
Radius TYP
10.92 (0.430)
± 0.13 (0.005)
9.55 (0.376) ± 0.25 (0.010)
1.27 (0.050) ± 0.25 (0.010)
PIN 1 IDENTIFIER
1.27 (0.050) TYP
19.05 (0.750) TYP
ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES
PACKAGE 220 – 32 LEAD, CERAMIC FLATPACK
20.83 (0.820)
± 0.25 (0.010)
2.60 (0.102) MAX
PIN 1
IDENTIFIER
10.41 (0.410)
± 0.13 (0.005)
10.16 (0.400)
± 0.51 (0.020)
0.43 (0.017)
± 0.05 (0.002)
0.127 (0.005)
+ 0.05 (0.002)
– 0.025 (0.001)
1.27 (0.050) TYP
19.05 (0.750) TYP
ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES
Microsemi Corporation reserves the right to change products or specifications without notice.
May 2012
Rev. 9
© 2012 Microsemi Corporation. All rights reserved.
5
Microsemi Corporation • (602) 437-1520 • www.microsemi.com
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