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LSD60R170GT

Description
Drain-source voltage (Vdss): 600V Continuous drain current (Id) (at 25°C): 20A (Tc) Gate-source threshold voltage: 4.5V @ 250uA Drain-source on-resistance: 170mΩ @ 10A, 10V Maximum power consumption Dispersion (Ta=25°C): 34W(Tc) Type: N-channel
CategoryDiscrete semiconductor    MOS (field effect tube)   
File Size963KB,10 Pages
ManufacturerLonten Semiconductor Co., Ltd.
Websitehttp://www.lonten.cc
Longteng Semiconductor Co., Ltd. is a high-tech enterprise dedicated to the research and development and sales of new power semiconductor devices. The company regards technological innovation as the core competitiveness of enterprise development and has built a first-class R&D center and application testing laboratory in China. The company has passed the ISO9001-2015 quality system certification and applied for 83 patents in the field of power semiconductor device design and application. The company has built a first-class R&D center and laboratory in China. The company's super junction power field effect transistor (Super Junction VDMOS, Shielding Gate VDMOS), insulated gate bipolar transistor (IGBT), fast recovery diode (FRD) and other series of products have the advantages of high energy efficiency, high reliability and high cost performance. They have been widely used in many fields such as computer and server power supply, LED drive power supply, charger, adapter, TV board power supply, etc.; they continue to grow in the fields of new energy vehicle charging piles, on-board chargers, automotive motor drives, photovoltaic inverters, industrial inverters, UPS, and welding machine markets.
Download Datasheet Parametric View All

LSD60R170GT Overview

Drain-source voltage (Vdss): 600V Continuous drain current (Id) (at 25°C): 20A (Tc) Gate-source threshold voltage: 4.5V @ 250uA Drain-source on-resistance: 170mΩ @ 10A, 10V Maximum power consumption Dispersion (Ta=25°C): 34W(Tc) Type: N-channel

LSD60R170GT Parametric

Parameter NameAttribute value
Drain-source voltage (Vdss)600V
Continuous drain current (Id) at 25°C20A(Tc)
Gate-source threshold voltage4.5V @ 250uA
Drain-source on-resistance170mΩ @ 10A,10V
Maximum power dissipation (Ta=25°C)34W(Tc)
typeN channel

LSD60R170GT Preview

Download Datasheet
LSB60R170GT/ LSD60R170GT
LonFET
Lonten N-channel 600V, 20A, 0.17Ω LonFET
TM
Power MOSFET
Description
LonFET
TM
Product Summary
V
DS
@ T
j,max
R
DS(on),max
I
DM
Q
g,typ
650V
0.17Ω
60A
39nC
The resulting
Power MOSFET is fabricated using
advanced super junction technology.
device has extremely low on resistance, making it
especially suitable for applications which require
superior power density and outstanding efficiency.
Features
Ultra low R
DS(on)
Ultra low gate charge (typ. Q
g
= 39nC)
100% UIS tested
RoHS compliant
TO-247
TO-220MF
D
Applications
G
Power faction correction (PFC).
Switched mode power supplies (SMPS).
Uninterruptible power supply (UPS).
S
N-Channel MOSFET
Pb
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Continuous drain current
( T
C
= 25° )
C
( T
C
= 100° )
C
Pulsed drain current
1)
Gate-Source voltage
Avalanche energy, single pulse
2)
Avalanche energy, repetitive
3)
Avalanche current, repetitive
3)
Power Dissipation
TO-247 ( T
C
= 25° )
C
- Derate above 25°
C
Power Dissipation
TO-220MF ( T
C
= 25° )
C
- Derate above 25°
C
Mounting torque To-220MF ( M2.5 screws )
Operating and Storage Temperature Range
Continuous diode forward current
Diode pulse current
T
J
, T
STG
I
S
I
S,pulse
P
D
I
DM
V
GSS
E
AS
E
AR
I
AR
V
DSS
I
D
Symbol
Value
600
20
13
60
±30
600
0.4
20
205
1.64
34
0.28
50
-55 to +150
20
60
Unit
V
A
A
A
V
mJ
mJ
A
W
W/°
C
W
W/°
C
Ncm
°
C
A
A
Version 1.0
2018
1
www.lonten.cc
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