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LNC06R079

Description
Drain-source voltage (Vdss): 60V Continuous drain current (Id) (at 25°C): 90A (Tc) Gate-source threshold voltage: 1.8V @ 250uA Drain-source on-resistance: 7.9mΩ @ 30A, 10V Maximum power Dissipation (Ta=25°C): 125W(Tc) Type: N-channel
CategoryDiscrete semiconductor    MOS (field effect tube)   
File Size1MB,9 Pages
ManufacturerLonten Semiconductor Co., Ltd.
Websitehttp://www.lonten.cc
Longteng Semiconductor Co., Ltd. is a high-tech enterprise dedicated to the research and development and sales of new power semiconductor devices. The company regards technological innovation as the core competitiveness of enterprise development and has built a first-class R&D center and application testing laboratory in China. The company has passed the ISO9001-2015 quality system certification and applied for 83 patents in the field of power semiconductor device design and application. The company has built a first-class R&D center and laboratory in China. The company's super junction power field effect transistor (Super Junction VDMOS, Shielding Gate VDMOS), insulated gate bipolar transistor (IGBT), fast recovery diode (FRD) and other series of products have the advantages of high energy efficiency, high reliability and high cost performance. They have been widely used in many fields such as computer and server power supply, LED drive power supply, charger, adapter, TV board power supply, etc.; they continue to grow in the fields of new energy vehicle charging piles, on-board chargers, automotive motor drives, photovoltaic inverters, industrial inverters, UPS, and welding machine markets.
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LNC06R079 Overview

Drain-source voltage (Vdss): 60V Continuous drain current (Id) (at 25°C): 90A (Tc) Gate-source threshold voltage: 1.8V @ 250uA Drain-source on-resistance: 7.9mΩ @ 30A, 10V Maximum power Dissipation (Ta=25°C): 125W(Tc) Type: N-channel

LNC06R079 Parametric

Parameter NameAttribute value
Drain-source voltage (Vdss)60V
Continuous drain current (Id) at 25°C90A(Tc)
Gate-source threshold voltage1.8V @ 250uA
Drain-source on-resistance7.9mΩ @ 30A,10V
Maximum power dissipation (Ta=25°C)125W(Tc)
typeN channel

LNC06R079 Preview

Download Datasheet
LNC06R079/LND06R079/LNE06R079
Lonten N-channel 60V, 90A, 7.9mΩ Power MOSFET
Description
These N-Channel enhancement mode power field
effect
transistors
are
using
trench
DMOS
technology. This advanced technology has been
especially tailored to minimize on-state resistance,
provide superior switching performance, and with
stand high energy pulse in the avalanche and
commutation mode. These devices are well suited
for high efficiency fast switching applications.
Product Summary
V
DSS
R
DS(on).max
@ V
GS
=10V
I
D
60V
7.9mΩ
90A
Pin Configuration
Features
60V,90A,R
DS(ON).max
=7.9mΩ@V
GS
=10V
Improved dv/dt capability
Fast switching
100% EAS Guaranteed
Green device available
TO-220
TO-220MF
D
G
TO-263
Applications
Motor Drives
UPS
DC-DC Converter
T
C
= 25°C unless otherwise noted
S
N-Channel MOSFET
Pb
S
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Symbol
V
DSS
I
D
Value
60
90
57
50
31
360
±20
144
125
38
-55 to +150
-55 to +150
Unit
V
A
A
A
A
A
V
mJ
W
W
°C
°C
Continuous drain current ( T
C
= 25°C ) TO-220/TO-263
Continuous drain current ( T
C
= 100°C ) TO-220/TO-263
Continuous drain current ( T
C
= 25°C ) TO-220MF
Continuous drain current ( T
C
= 100°C ) TO-220MF
Pulsed drain current
1)
Gate-Source voltage
Avalanche energy
2)
Power Dissipation ( T
C
= 25°C ) TO-220/TO-263
Power Dissipation ( T
C
= 25°C ) TO-220MF
Storage Temperature Range
Operating Junction Temperature Range
I
D
I
DM
V
GSS
E
AS
P
D
P
D
T
STG
T
J
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case TO-220/TO-263
Thermal Resistance, Junction-to-Case TO-220MF
Symbol
R
θJC
R
θJC
Value
1.0
3.3
Unit
°C/W
°C/W
Version 1.3,Jan-2020
1
www.lonten.cc
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