KTC3265 datasheet, PDF - EEWORLD Datasheet

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KTC3265: DescriptionNPN transistor; CategoryDiscrete semiconductor; File Size2MB，2 Pages; ManufacturerJCET; Websitehttp://www.cj-elec.com/; Jiangsu Changdian Technology Co., Ltd. focuses on semiconductor packaging and testing business, providing customers at home and abroad with a full range of solutions such as chip testing, packaging design, packaging testing, etc. The company was successfully listed on the Shanghai Main Board in 2003, becoming the first semiconductor packaging and testing listed company in China. It now has a national enterprise technology center and a postdoctoral research workstation. It is a national key high-tech enterprise, a supporting unit of the National Engineering Laboratory for High-density Integrated Circuits, and the chairman unit of the Integrated Circuit Packaging Technology Innovation Strategic Alliance.

Discrete devices: diodes (switching diodes, Schottky diodes (Schottky rectifiers), voltage regulator diodes, Pin diodes, TVS diodes, rectifier diodes, fast recovery diodes); transistors (Darlington tubes, digital transistors, MOSFETs); thyristors: silicon-controlled rectifiers, triacs; composite tubes: transistors + field-effect tubes, dual transistors, dual digital transistors, digital transistors + transistors, transistors + diodes, field-effect tubes + diodes, dual field-effect tubes. Voltage regulator circuit; energy-saving lamp charger switch tube

Lead frame: TO series (TO); SOD series (SOD); SOT series (TSOT, SOT); FBP series (WBFBP); QFN series (QFNWB, DFNWB, DFNFC, QFNFC); QFP series (LQFP: PQFP: PLCC: TQFP); SIP series (SIP, HSIP, FSIP); SOP series (SOP, HSOP, SSOP, MSOP, HTSOP, TSSOP); DIP series (DIP, FDIP, SDIP); PDFN series; PQFN series; MIS series (MISFC, MISWB)

Nine core technologies: Through Silicon Via (TSV) packaging technology; SiP RF packaging technology; wafer-level 3D rewiring packaging process technology; copper bump interconnection technology; high-density FC-BGA packaging and testing technology (Flip Chip BGA); multi-turn array four-sided pinless packaging and testing technology; package body 3D stacking technology; 50μm or less ultra-thin chip 3D stacking packaging technology; MEMS multi-chip packaging technology; MIS packaging technology (pre-encapsulated interconnection system); BGA packaging technology, etc.

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KTC3265 Overview

NPN transistor

Features

Product Name: NPN Transistor

Product model: KTC3265

Product parameters:

Pcm (maximum dissipated power): 200mW

Ic (collector current): 800mA

BVcbo (collector-base breakdown voltage): 35V

BVceo (Collector-Emitter Breakdown Voltage): 30V

BVebo (emitter-base breakdown voltage): 5V

hFE (current gain): Min: 100, Max: 320

VCE (sat) saturation voltage drop: 0.5V

fT (transition frequency): 120+MHz

Package: SOT-23

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

SOT-23 Plastic-Encapsulate Transistors

KTC3265

FEATURES

High DC current gain

Complementary to KTA1298

MAXIMUM RATINGS

(T

a

=25

℃

unless otherwise noted)

Symbol

V

CBO

V

CEO

V

EBO

I

C

P

C

T

j

T

stg

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current -Continuous

Collector Power Dissipation

Junction Temperature

Storage Temperature

Value

35

30

5

800

200

150

-55-150

Unit

V

mA

mW

℃

TRANSISTOR (NPN)

SOT-23

1. BASE

2. EMITTER

3. COLLECTOR

ELECTRICAL CHARACTERISTICS (T

a

=25℃ unless otherwise specified)

Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

DC current gain

Collector-emitter saturation voltage

base-emitter voltage

Transition frequency

Collector output capacitance

Symbol

V

(BR)CBO

V

(BR)CEO

V

(BR)EBO

I

CBO

I

EBO

h

FE

V

CE(sat)

V

BE

Test conditions

I

C

= 100

μ

A, I

E

=0

I

C

= 10mA, I

B

=0

I

E

=100

μ

A, I

C

=0

V

CB

=30 V, I

E

=0

V

EB

=5 V, I

C

=0

V

CE

=1V, I

C

= 100mA

I

C

=500mA, I

B

=20mA

V

CE

=1V,I

C

=10mA

V

CE

=5V, I

C

=10mA

0.5

120

13

100

Min

35

30

5

0.1

320

0.5

0.8

V

MHz

pF

Typ

Max

Unit

V

μ

A

μ

A

f

T

C

ob

O

f=

100MHz

V

CB

=10V,I

E

=0,f=1MH

Z

CLASSIFICATION OF h

FE

Rank

Range

Marking

Y

160-320

EY

100-200

EO

A,May,2011

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