EEWORLDEEWORLDEEWORLD

Part Number

Search

KSA614F

Description
PNP transistor
CategoryDiscrete semiconductor   
File Size678KB,1 Pages
ManufacturerJCET
Websitehttp://www.cj-elec.com/

Jiangsu Changdian Technology Co., Ltd. focuses on semiconductor packaging and testing business, providing customers at home and abroad with a full range of solutions such as chip testing, packaging design, packaging testing, etc. The company was successfully listed on the Shanghai Main Board in 2003, becoming the first semiconductor packaging and testing listed company in China. It now has a national enterprise technology center and a postdoctoral research workstation. It is a national key high-tech enterprise, a supporting unit of the National Engineering Laboratory for High-density Integrated Circuits, and the chairman unit of the Integrated Circuit Packaging Technology Innovation Strategic Alliance.

Discrete devices: diodes (switching diodes, Schottky diodes (Schottky rectifiers), voltage regulator diodes, Pin diodes, TVS diodes, rectifier diodes, fast recovery diodes); transistors (Darlington tubes, digital transistors, MOSFETs); thyristors: silicon-controlled rectifiers, triacs; composite tubes: transistors + field-effect tubes, dual transistors, dual digital transistors, digital transistors + transistors, transistors + diodes, field-effect tubes + diodes, dual field-effect tubes. Voltage regulator circuit; energy-saving lamp charger switch tube

Lead frame: TO series (TO); SOD series (SOD); SOT series (TSOT, SOT); FBP series (WBFBP); QFN series (QFNWB, DFNWB, DFNFC, QFNFC); ​​QFP series (LQFP: PQFP: PLCC: TQFP); SIP series (SIP, HSIP, FSIP); SOP series (SOP, HSOP, SSOP, MSOP, HTSOP, TSSOP); DIP series (DIP, FDIP, SDIP); PDFN series; PQFN series; MIS series (MISFC, MISWB)

Nine core technologies: Through Silicon Via (TSV) packaging technology; SiP RF packaging technology; wafer-level 3D rewiring packaging process technology; copper bump interconnection technology; high-density FC-BGA packaging and testing technology (Flip Chip BGA); multi-turn array four-sided pinless packaging and testing technology; package body 3D stacking technology; 50μm or less ultra-thin chip 3D stacking packaging technology; MEMS multi-chip packaging technology; MIS packaging technology (pre-encapsulated interconnection system); BGA packaging technology, etc.

 

 

Download Datasheet View All

KSA614F Overview

PNP transistor

Features

Product Name: PNP Transistor


Product model: KSA614F



Product parameters:


Pcm (maximum dissipated power): 2000mW


Ic (collector current): 3000mA


BVcbo (Collector-Base Breakdown Voltage): 80V


BVceo (Collector-Emitter Breakdown Voltage): 55V


BVebo (emitter-base breakdown voltage): 5V


hFE (current gain): Min: 40, Max: 240


VCE (sat) saturation voltage drop: 0.5V



Package: TO-220F

KSA614F Preview

Download Datasheet
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220F
KSA614F
TRANSISTOR (PNP)
Plastic-Encapsulate Transistors
TO-220F
FEATURE
Low Frequency Amplifier
Medium Speed Switching
1. BASE
2. COLLECTOR
3. EMITTE
MAXIMUM RATINGS (T
a
=25
unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
stg
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Dissipation
Junction Temperature
Storage Temperature
Parameter
Value
-80
-55
-5
-3
2
150
-55 to +150
Unit
V
V
V
A
W
ELECTRICAL CHARACTERISTICS(T
a
=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Symbol
V(BR)
CBO
V(BR)
CEO
V(BR)
EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
Test
conditions
Min
-80
-55
-5
-50
-50
40
240
-0.5
V
Typ
Max
Unit
V
V
V
µA
µA
I
C
= -500µA, I
E
=0
I
C
= -10mA ,
I
B
=0
I
E
= -500µA, I
C
=0
V
CB
= -50 V, IE=0
V
EB
= -4V, I
C
=0
V
CE
=-5V, I
C
= -500mA
I
C
= -1 A, I
B
= -100mA
CLASSIFICATION OF hFE
Rank
Range
R
40-80
O
70-140
Y
120-240
A,Jun,2011
Analog Multiplexer and Switch Configuration
Designers often struggle to find the most effective way to save cost, power, and space when digitizing multiple sensors or connecting multiple transceivers to a common communication bus. The solution ...
fish001 Analogue and Mixed Signal
Build a "core" building together: front-line engineers talk about national chips, valid all year round (11 floors have been built)
Let’s set a small goal first: we hope to build the 100th floor by the end of 2021 Whether you use Guoxin or not, it is time to pay attention to it. Some netizens have already taken the lead and have e...
EEWORLD社区 Domestic Chip Exchange
Principle of MCU reset
The reset circuit of the microcontroller puts the microcontroller into a reset state. The reset operation can complete the initialization of the microcontroller and can also restart the microcontrolle...
火辣西米秀 Microcontroller MCU
Regarding the C216 issue, I want to make a combination lock, and I'm a newbie looking for advice from a master! !
LOCK.C(24): error C216: subscript on non-array or too many dimensions What is the reason for this? I have found many posts on the Internet. Some say it is array out of bounds, some say it is incorrect...
落魄IV MCU
The use of SRAM in HPM6750 and the problems encountered
HPM6750 can use SRAM by adding the flash_sdram_xip parameter when creating a project, for example: generate_project -b hpm6750evkmini -t flash_sdram_xip, then the code will be stored in the FLASH spac...
littleshrimp Domestic Chip Exchange
Oscilloscope automobile turbocharger solenoid valve waveform and analysis
Turbochargers increase power without increasing engine exhaust volume. The benefits of turbochargers also include increased torque within the effective speed range, improved fuel economy and reduced e...
Micsig麦科信 Test/Measurement

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

About Us Customer Service Contact Information Datasheet Sitemap LatestNews

Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190

Copyright © 2005-2024 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号