StrongIRFET™
IRF60DM206
Application
Brushed motor drive applications
BLDC motor drive applications
Battery powered circuits
Half-bridge and full-bridge topologies
Synchronous rectifier applications
Resonant mode power supplies
OR-ing and redundant power switches
DC/DC and AC/DC converters
DC/AC inverters
Benefits
Improved gate, avalanche and dynamic dv/dt ruggedness
Fully characterized capacitance and avalanche SOA
Enhanced body diode dv/dt and di/dt capability
Lead-free, RoHS compliant
DirectFET
®
N-Channel Power MOSFET
V
DSS
R
DS(on)
typ.
max
I
D
S
S
D
G
S
S
S
D
60V
2.2m
2.9m
130A
ME
DirectFET
®
ISOMETRIC
Base part number
IRF60DM206
Package Type
DirectFET
®
ME
Standard Pack
Form
Tape and Reel
Quantity
4800
Orderable Part Number
IRF60DM206
RDS(on), Drain-to -Source On Resistance (m
)
8
ID = 80A
7
ID, Drain Current (A)
140
120
100
80
60
40
20
0
6
5
4
3
2
1
4
6
8
10
12
14
16
18
20
T J = 25°C
T J = 125°C
25
50
75
100
125
150
VGS, Gate -to -Source Voltage (V)
T C , Case Temperature (°C)
Fig 1.
Typical On-Resistance vs. Gate Voltage
Fig 2.
Maximum Drain Current vs. Case Temperature
1
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IRF60DM206
Max.
130
82
530
96
0.78
± 20
-55 to + 150
81
154
See Fig 15, 15, 23a, 23b
Typ.
–––
12.5
20
–––
0.75
Max.
45
–––
–––
1.3
–––
Units
mJ
A
mJ
Units
A
W
W/°C
V
°C
Absolute Maximum Ratings
Symbol
Parameter
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
I
DM
P
D
@T
C
= 25°C Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
V
GS
Operating Junction and
T
J
Storage Temperature Range
T
STG
Avalanche Characteristics
E
AS (Thermally limited)
Single Pulse Avalanche Energy
E
AS (Thermally limited)
Single Pulse Avalanche Energy
I
AR
Avalanche Current
E
AR
Repetitive Avalanche Energy
Thermal Resistance
Symbol
Parameter
Junction-to-Ambient
R
JA
Junction-to-Ambient
R
JA
Junction-to-Ambient
R
JA
Junction-to-Case
R
JC
Junction-to-PCB Mounted
R
J-PCB
Static @ T
J
= 25°C (unless otherwise specified)
Symbol
Parameter
V
(BR)DSS
Drain-to-Source Breakdown Voltage
V
(BR)DSS
/T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
Static Drain-to-Source On-Resistance
V
GS(th)
I
DSS
I
GSS
R
G
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Internal Gate Resistance
°C/W
Min. Typ. Max. Units
Conditions
60
––– –––
V
V
GS
= 0V, I
D
= 250µA
–––
38
––– mV/°C Reference to 25°C, I
D
= 1.0mA
––– 2.2
2.9
m V
GS
= 10V, I
D
= 80A
––– 2.7 ––– m V
GS
= 6.0V, I
D
= 40A
2.1
3.0 3.7
V
V
DS
= V
GS
, I
D
= 150µA
––– ––– 1.0
µA V
DS
= 60V, V
GS
= 0V
––– ––– 150
V
DS
= 60V, V
GS
= 0V, T
J
= 125°C
––– ––– 100
nA V
GS
= 20V
––– ––– -100
V
GS
= -20V
––– 0.8 –––
TC measured with thermocouple mounted to top (Drain) of part.
Notes:
Mounted on minimum footprint full size board with metalized
back and with small clip heatsink.
Used double sided cooling , mounting pad with large heatsink.
Surface mounted on 1 in. square Cu
board (still air).
Mounted to a PCB with small clip
heatsink (still air)
Mounted on minimum footprint full size
board with metalized back and with
small clip heatsink (still air)
2
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IRF60DM206
Dynamic @ T
J
= 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
gfs
Forward Transconductance
148 ––– –––
S V
DS
= 10V, I
D
= 80A
Q
g
Total Gate Charge
––– 133 200
I
D
= 80A
Q
gs
Gate-to-Source Charge
–––
33
–––
V
DS
=30V
nC
Q
gd
Gate-to-Drain ("Miller") Charge
–––
40
–––
V
GS
= 10V
Q
sync
Total Gate Charge Sync. (Q
g
- Q
gd
)
–––
93
–––
t
d(on)
Turn-On Delay Time
–––
17
–––
V
DD
= 30V
t
r
Rise Time
–––
32
–––
I = 30A
ns
D
t
d(off)
Turn-Off Delay Time
–––
60
–––
R
G
= 2.7
t
f
Fall Time
–––
30
–––
V
GS
= 10V
C
iss
Input Capacitance
––– 6530 –––
V
GS
= 0V
C
oss
Output Capacitance
––– 650 –––
V
DS
= 25V
C
rss
Reverse Transfer Capacitance
––– 420 –––
pF ƒ = 1.0MHz
C
oss
eff. (ER) Effective Output Capacitance (Energy Related) ––– 670 –––
V
GS
= 0V, V
DS
= 0V to 48V
C
oss
eff. (TR) Effective Output Capacitance (Time Related)
––– 840 –––
V
GS
= 0V, V
DS
= 0V to 48V
Diode Characteristics
Symbol
Parameter
I
S
Continuous Source Current
(Body Diode)
I
SM
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
V
SD
dv/dt
t
rr
Q
rr
I
RRM
Peak Diode Recovery
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Min. Typ. Max.
––– –––
130
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
8.5
47.5
48
79
84
2.9
530
1.2
–––
–––
–––
–––
–––
–––
Units
Conditions
A MOSFET symbol
showing the
integral reverse
p-n junction diode.
V T
J
= 25°C,I
S
= 80A, V
GS
= 0V
D
G
S
V/ns T
J
=150°C,I
S
=80A, V
DS
= 60V
T
J
= 25° C V
R
= 51V,
T
J
= 125°C I
F
= 80A
nC T
J
= 25°C di/dt = 100A/µs
T
J
= 125°C
A T
J
= 25°C
ns
Notes:
Repetitive
rating; pulse width limited by max. junction
temperature.
Limited by T
J
max, starting T
J
= 25°C, L = 25µH
R
G
= 50, I
AS
= 80A, V
GS
=10V.
I
SD
≤
80A, di/dt
≤
1410A/µs, V
DD
≤
V(
BR)DSS
, T
J
≤
150°C.
Pulse
width
≤
400µs; duty cycle
≤
2%.
C
oss
eff. (TR) is a fixed capacitance that gives the
same charging time as C
oss
while V
DS
is rising from 0
to 80% V
DSS
.
oss
eff. (ER) is a fixed capacitance that gives the
C
same energy as C
oss
while V
DS
is rising from 0 to
80% V
DSS
.
When mounted on 1" square PCB (FR-4 or G-10
Material). For recommended footprint and soldering
techniques refer to application note #AN-994.
R
is measured at T
J
approximately 90°C.
Limited by T
J
max, starting T
J
= 25°C, L= 1mH, R
G
= 50,
I
AS
= 17.5A, V
GS
=10V.
3
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June 04, 2015
1000
1000
TOP
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
IRF60DM206
TOP
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
ID, Drain-to-Source Current (A)
100
BOTTOM
ID, Drain-to-Source Current (A)
BOTTOM
100
4.5V
4.5V
10
60µs PULSE WIDTH
Tj = 25°C
60µs PULSE WIDTH
Tj = 150°C
1
0.1
1
10
100
V DS, Drain-to-Source Voltage (V)
10
0.1
1
10
100
V DS, Drain-to-Source Voltage (V)
Fig 3.
Typical Output Characteristics
1000
RDS(on) , Drain-to-Source On Resistance
(Normalized)
Fig 4.
Typical Output Characteristics
2.0
ID = 80A
VGS = 10V
ID, Drain-to-Source Current (A)
T J = 150°C
100
1.5
T J = 25°C
10
1.0
VDS = 25V
60µs PULSE WIDTH
1
3
4
5
6
7
0.5
-60 -40 -20 0
20 40 60 80 100 120 140 160
VGS, Gate-to-Source Voltage (V)
T J , Junction Temperature (°C)
Fig 5.
Typical Transfer Characteristics
100000
VGS = 0V,
f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
Crss = C gd
Coss = Cds + Cgd
Fig 6.
Normalized On-Resistance vs. Temperature
14
ID= 80A
VGS, Gate-to-Source Voltage (V)
12
10
8
6
4
2
0
VDS= 48V
VDS= 30V
VDS= 12V
C, Capacitance (pF)
10000
Ciss
Coss
Crss
1000
100
1
10
VDS, Drain-to-Source Voltage (V)
100
0
20
40
60
80 100 120 140 160 180
QG, Total Gate Charge (nC)
Fig 7.
Typical Capacitance vs. Drain-to-Source Voltage
4
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Fig 8.
Typical Gate Charge vs. Gate-to-Source Voltage
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June 04, 2015
1000
IRF60DM206
1000
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
100
T J = 150°C
100
OPERATION IN
THIS AREA
LIMITED BY
RDS(on)
100µsec
1msec
T J = 25°C
10
10
1
10msec
DC
1
VGS = 0V
0.1
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
VSD, Source-to-Drain Voltage (V)
0.1
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
1
10
100
0.01
VDS, Drain-to-Source Voltage (V)
Fig 9.
Typical Source-Drain Diode Forward Voltage
V(BR)DSS , Drain-to-Source Breakdown Voltage (V)
70
Fig 10.
Maximum Safe Operating Area
1.2
Id = 1.0mA
68
66
1.0
0.8
Energy (µJ)
64
62
60
58
-60 -40 -20 0
20 40 60 80 100 120 140 160
T J , Temperature ( °C )
0.6
0.4
0.2
0.0
-10
0
10
20
30
40
50
60
VDS, Drain-to-Source Voltage (V)
Fig 11.
Drain-to-Source Breakdown Voltage
RDS(on), Drain-to -Source On Resistance (
m
)
Fig 12.
Typical C
oss
Stored Energy
10
9
8
7
6
5
4
3
2
1
0
20 40 60 80 100 120 140 160 180 200
ID, Drain Current (A)
VGS = 5.5V
VGS = 6.0V
VGS = 7.0V
VGS = 8.0V
VGS = 10V
Fig 13.
Typical On-Resistance vs. Drain Current
5
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June 04, 2015
Analog electronics
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