KIA3407 datasheet, PDF - EEWORLD Datasheet

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KIA3407: DescriptionDrain-source voltage (Vdss): 30V Continuous drain current (Id) (at 25°C): 4.1A Gate-source threshold voltage: 3V @ 250uA Drain-source on-resistance: 60mΩ @ 4.1A, 10V Maximum power dissipation ( Ta=25°C): 1.4W Type: P channel P channel, -30V, -4.1A, 90mΩ@-4.5V, functions and pins are the same as AO3407; CategoryDiscrete semiconductor MOS (field effect tube); File Size109KB，5 Pages; ManufacturerKia Semiconductor Technology (shenzhen) Co., Ltd.; Websitehttp://www.kiaic.com/page/qiyejianjie.htm; Shenzhen Keyiya Semiconductor Technology Co., Ltd. is a national high-tech enterprise specializing in the development and design of medium and high power field effect transistors, fast recovery diodes, and three-terminal voltage regulators, integrating R&D, production and sales.

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KIA3407 Overview

Drain-source voltage (Vdss): 30V Continuous drain current (Id) (at 25°C): 4.1A Gate-source threshold voltage: 3V @ 250uA Drain-source on-resistance: 60mΩ @ 4.1A, 10V Maximum power dissipation ( Ta=25°C): 1.4W Type: P channel P channel, -30V, -4.1A, 90mΩ@-4.5V, functions and pins are the same as AO3407

KIA3407 Parametric

Parameter Name	Attribute value
Drain-source voltage (Vdss)	30V
Continuous drain current (Id) at 25°C	4.1A
Gate-source threshold voltage	3V @ 250uA
Drain-source on-resistance	60mΩ @ 4.1A,10V
Maximum power dissipation (Ta=25°C)	1.4W
type	P channel

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KIA

SEMICONDUCTORS

-4.1A，-30V

P-CHANNEL MOSFET

3407

1.Description

The KIA3407 uses advanced trench technology to provide excellent R

DS(on)

,low gate

charge.This device is suitable for use as a load switch or in PWM applications.Standard Product KIA3407

is Pb-free(meets ROHS & Sony 259 specifications).KIA3407 is a Green Product ordering option.

Features

(V)=-30V

=-4.1A

DS(on)

<60mΩ(V

=-10V,I

=-4.1A)

DS(on)

<90mΩ(V

=-4.5V,I

=-3.0A)

3.Symbol

Function

Gate

Source

Drain

1 of 5

Rev 1.1 JAN 2014

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