KIA
SEMICONDUCTORS
25A，60V
N-CHANNEL MOSFET
30N06B
1.Description
The KIA30N06B is the highest performance trench N-ch MOSFETs with extreme high cell
density,which provide excellent RDSON and gate charge for most of the synchronous buck converter
applications.The KIA30N06B meet the RoHS and Green Product requirenment,100%EAS guaranteed
with full function reliability approved.
2.
Features
R
DS(on)
=25mΩ @ V
DS
=60V
Avanced high cell density Trench technology
Super Low Gate Charge
Excellent Cdv/dt effect decline
100%EAS Guaranteed
Green Device Available
3.
Applications
High Frequency Point-of-Load Synchronous Buck Converter
Networking DC-DC Power System
Load Switch
4.Symbol
Pin
1
2
3
4
Function
Gate
Drain
Source
Drain
1 of 5
Rev 1.1 JAN 2014
KIA
SEMICONDUCTORS
25A，60V
N-CHANNEL MOSFET
30N06B
5.
Absolute maximum ratings
Parameter
Drain-source voltage
Gate-source voltage
Continuous drain current, T
C
=25ºC
V
GS
@10V
1
T
C
=100ºC
2
Pulsed drain current
Single pulse avalanche energy
3
Avalanche current
Total power dissipation
4
T
C
=25 ºC
Operation junction temperature range
Storage temperature range
Symbol
V
DS
V
GS
I
D
I
DM
E
AS
I
AS
P
D
T
J
T
STG
Rating
60
+20
25
18
50
34.5
22.6
34.7
-55 to150
-55 to150
Units
V
V
A
A
A
mJ
A
W
ºC
ºC
6.
Thermal characteristics
Parameter
Thermal resistance,Junction-ambient
1
Thermal resistance,Junction-case
1
Symbol
R
θJA
R
θJC
Typ
--
--
Max
62
3.6
Unit
ºC/W
2 of 5
Rev 1.1 JAN 2014
KIA
SEMICONDUCTORS
25A，60V
N-CHANNEL MOSFET
30N06B
7.
Electrical characteristics
Parameter
Drain-source breakdown voltage
BV
DSS
temperature coefficient
Static drain-source on-resistance
2
Gate threshold voltage
V
GS(th)
temperature coefficient
Drain-source leakage current
Gate- source leakage current
Forward transconductance
Gate resistance
Total gate charge(4.5V)
Gate-source charge
Gate-drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Input capacitance
Output capacitance
Reverse transfer capacitance
Single pulse avalanche energy
5
Continuous source current
1,6
Pulsed source current
2,6
Diode forward voltage
2
Symbol
BV
DSS
△BV
DSS
/△T
J
R
DS(on)
V
GS(th)
△V
GS(th)
I
DSS
I
GSS
gfs
R
g
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
EAS
I
S
I
SM
V
SD
(T
J
=25°C,unless otherwise noted
Test Conditions
Min Typ
Max
Units
V
GS
=0V,I
D
=250μA
60
-
-
V
Reference to 25 ºC,
V/°C
0.063
I
D
=1mA
V
GS
=10V,I
D
=15A
25
30
mΩ
V
GS
=4.5V,I
D
=10A
30
38
1.2
2.5
V
V
DS
=V
GS
, I
D
=250μA
mV/°C
-5.24
V
DS
=48V, V
GS
=0V
1
μA
T
J
=25°C
V
DS
=48V, V
GS
=0V
5
μA
T
J
=55°C
V
GS
=+20V, V
DS
=0V
+100
nA
V
DS
=5V, I
D
=15A
V
DS
=0V, V
GS
=0V,f=1MHz
V
DS
=48V, V
GS
=4.5V
I
D
=10A
V
DD
=30V,I
D
=10A,
R
G
=3.3Ω, V
GS
=10V
V
DS
=25V,V
GS
=0V,
f=1MHz
V
DD
=25V,L=0.1mH,
I
AS
=15A
V
G
= V
D=
=0V,
Force current
V
GS
=0V,I
S
=1A, T
J
=25ºC
15.2
25
50
1.2
-
17
3.2
12.56
3.24
6.31
8
14.2
24.4
4.6
1345
72.5
54.4
S
Ω
nC
ns
pF
mJ
A
A
V
Note:1.The data tested by surface mounted on a 1 inch
2
FR-4 board with 20Z copper.
2.The data tested by pulsed, pulse width<300μs,duty cycle<2%
3.The EAS data shows Max.rating.The test condition is V
DD
=25V, V
GS
=10V,L=0.1mH,I
AS
=15A
4.The power dissipation is limited by 150°C junction temperature
5.The Min, value is 100% EAS tested guarantee.
6.The data is theoretically the same as I
D
and I
DM
,in real applications, should be limited by total
power dissipation.
3 of 5
Rev 1.1 JAN 2014
Microcontroller MCU
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