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KCM3560A

Description
Drain-source voltage (Vdss): 20V Continuous drain current (Id) (at 25°C): 60A Gate-source threshold voltage: 4V @ 250uA Drain-source on-resistance: 56mΩ @ 20A, 10V Maximum power dissipation (Ta= 25°C): 379W Type: N-channel N-channel, 600V, 76A
CategoryDiscrete semiconductor    MOS (field effect tube)   
File Size159KB,5 Pages
ManufacturerKia Semiconductor Technology (shenzhen) Co., Ltd.
Websitehttp://www.kiaic.com/page/qiyejianjie.htm
Shenzhen Keyiya Semiconductor Technology Co., Ltd. is a national high-tech enterprise specializing in the development and design of medium and high power field effect transistors, fast recovery diodes, and three-terminal voltage regulators, integrating R&D, production and sales.
Download Datasheet Parametric View All

KCM3560A Overview

Drain-source voltage (Vdss): 20V Continuous drain current (Id) (at 25°C): 60A Gate-source threshold voltage: 4V @ 250uA Drain-source on-resistance: 56mΩ @ 20A, 10V Maximum power dissipation (Ta= 25°C): 379W Type: N-channel N-channel, 600V, 76A

KCM3560A Parametric

Parameter NameAttribute value
Drain-source voltage (Vdss)20V
Continuous drain current (Id) at 25°C60A
Gate-source threshold voltage4V @ 250uA
Drain-source on-resistance56mΩ @ 20A,10V
Maximum power dissipation (Ta=25°C)379W
typeN channel

KCM3560A Preview

Download Datasheet
KIA
SEMICONDUCTORS
60A,500V
N-CHANNEL MOSFET
KCX3650A
1.Description
This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage
blocking capability without degrading performance over time. In addition, this advanced MOSFET is
designed to withstand high energy in avalanche and commutation modes. The new energy efficient design
also offers a drain-to-source diode with a fast recovery time. Designed for high voltage, high speed
switching applications in power supplies, converters and PWM motor controls, these devices are
particularly well suited for bridge circuits where diode speed and commutating safe operating areas are
critical and offer additional and safety margin against unexpected voltage transients.
2.
Features
n
n
n
n
n
n
Robust High Voltage Termination
Avalanche Energy Specified
Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
Diode is Characterized for Use in Bridge Circuits
I
DSS
and V
DS(ON)
Specified at Elevated Temperature
Isolated Mounting Hole Reduces Mounting Hardware
3.
Pin configuration
Pin
1
2
3
Function
Gate
Drain
Source
1 of 5
Rev 1.0 JAN 2018
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