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KCF9860A

Description
Drain-source voltage (Vdss): 600V Continuous drain current (Id) (at 25°C): 47A Gate-source threshold voltage: 4V @ 250uA Drain-source on-resistance: 81mΩ @ 15.6A, 10V Maximum power dissipation (Ta =25°C): 50W Type: N-channel N-channel, 600V, 47A
CategoryDiscrete semiconductor    MOS (field effect tube)   
File Size140KB,5 Pages
ManufacturerKia Semiconductor Technology (shenzhen) Co., Ltd.
Websitehttp://www.kiaic.com/page/qiyejianjie.htm
Shenzhen Keyiya Semiconductor Technology Co., Ltd. is a national high-tech enterprise specializing in the development and design of medium and high power field effect transistors, fast recovery diodes, and three-terminal voltage regulators, integrating R&D, production and sales.
Download Datasheet Parametric View All

KCF9860A Overview

Drain-source voltage (Vdss): 600V Continuous drain current (Id) (at 25°C): 47A Gate-source threshold voltage: 4V @ 250uA Drain-source on-resistance: 81mΩ @ 15.6A, 10V Maximum power dissipation (Ta =25°C): 50W Type: N-channel N-channel, 600V, 47A

KCF9860A Parametric

Parameter NameAttribute value
Drain-source voltage (Vdss)600V
Continuous drain current (Id) at 25°C47A
Gate-source threshold voltage4V @ 250uA
Drain-source on-resistance81mΩ @ 15.6A,10V
Maximum power dissipation (Ta=25°C)50W
typeN channel

KCF9860A Preview

Download Datasheet
KIA
SEMICONDUCTORS
47A,600V
N-CHANNEL MOSFET
KCX9860A
1.
Description
This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking
capability without degrading performance over time. In addition, this advanced MOSFET is designed to
withstand high energy in avalanche and commutation modes. The new energy efficient design also offers a
drain-tosource diode with a fast recovery time. Designed for high voltage, high speed switching
applications in power supplies, converters and PWM motor controls, these devices are particularly well
suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer
additional and safety margin against unexpected voltage transients.
2.Features
n
n
n
n
n
n
Robust high voltage termination
Avalanche energy specified
Source-to-drain diode recovery time comparable to a discrete fast recovery diode
Diode is characterized for use in bridge circuits
I
DSS
and V
DS(ON)
specified at elevated temperature
Isolated mounting hole reduces mounting hardware
3.Symbol
Pin
1
2
3
Function
Gate
Drain
Source
1 of 5
Rev 1.1 Dec. 2017
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