HX2301 datasheet, PDF - EEWORLD Datasheet

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HX2301: DescriptionDrain-source voltage (Vdss): 20V Continuous drain current (Id) (at 25°C): 2.8A Gate-source threshold voltage: 1.2V @ 250uA Drain-source on-resistance: 85mΩ @ 2.8A, 4.5V Maximum power consumption Dispersion (Ta=25°C): 1W Type: P-channel; CategoryDiscrete semiconductor MOS (field effect tube); File Size96KB，1 Pages; ManufacturerShenzhen HengJiaXing Electronics Co., Ltd.; Websitehttp://www.hjxai.com/; Shenzhen Hengjiaxing Electronics Co., Ltd. was established on May 20, 2010. It is a comprehensive enterprise integrating agency, supporting and technical solutions. It has always focused on power management IC and MOS tubes. The brands of the original authorized agents are: Weimeng, Tuowei, Nanlin, Fuman, Quanxin and Tianyuan, and it has its own brand: Hengjiaxing. Products are widely used in: wireless charging, mobile power, drones, security monitoring, car navigation, driving records, toys and other fields. The company adheres to the warehousing business philosophy, with integrity, professionalism, gratitude and win-win as its purpose, so that customers can buy with confidence, use comfortably and cooperate happily! Providing the most satisfactory service to customers is its responsibility. Through a powerful system, it provides standardized, professional, diversified and comprehensive high-quality services to enterprises, and is deeply trusted and supported by domestic and foreign manufacturers and distributors! Through years of hard work, the company's management has become more and more perfect, with rich product resources, a strong technical R&D team, excellent sales elites and a high-quality service team. It is willing to work hand in hand with upstream and downstream partners to make progress together, achieve mutual benefit and win-win results, create brilliance, and do its utmost to help the Chinese core to flourish!

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HX2301 Overview

Drain-source voltage (Vdss): 20V Continuous drain current (Id) (at 25°C): 2.8A Gate-source threshold voltage: 1.2V @ 250uA Drain-source on-resistance: 85mΩ @ 2.8A, 4.5V Maximum power consumption Dispersion (Ta=25°C): 1W Type: P-channel

HX2301 Parametric

Parameter Name	Attribute value
Drain-source voltage (Vdss)	20V
Continuous drain current (Id) at 25°C	2.8A
Gate-source threshold voltage	1.2V @ 250uA
Drain-source on-resistance	85mΩ @ 2.8A,4.5V
Maximum power dissipation (Ta=25°C)	1W
type	P channel

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SOT-23 -3Plastic-Encapsulate Transistors

HX2301

MOSFET(P-Channel)

FEATURES

TrenchFET Power MOSFET

MARKING: A1SHB

MAXIMUM RATINGS

(TA=25℃ unless otherwise noted)

Symbol

Tstg

Drain-Source voltage

Gate-Source voltage

Drain current

Power Dissipation

Junction Temperature

Storage Temperature

Parameter

Value

-20

±12

-2.8

150

-55-150

Units

℃

ELECTRICAL CHARACTERISTICS

(Tamb=25℃unless otherwise specified)

Parameter

Drain-Source Breakdown Voltage

Gate-Threshold Voltage

Gate-body Leakage

Zero Gate Voltage Drain Current

Drain-Source On-Resistance

Forward Trans conductance

Dynamic Characteristics

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Switching Capacitance

Turn-on Delay Time

Turn-on Rise Time

Turn-off Delay Time

Turn-off Fall Time

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Drain-Source Diode Characteristics

Diode Forward Voltage

Diode Forward Current

=0V, I

=-1.3A

-1.2

-1.3

d(on)

d(off)

=-10V, I

=- 2.8A ,

=-4.5V

GEN

=-60ohm

=10ohm

=-10V, I

=-3A,

=-4.5V,

6.6

113

6.1

1.7

1.3

Ciss

Coss

Crss

=-10V, V

=0V,

f=1MHz

560

Symbol

(BR)DSS

Vth

(GS)

GSS

DSS

DS(ON)

gfs

Test conditions

=0V,I

=-250uA

= V

GS,

=-250 uA

=0V, V

=±12V

=-20V, V

=0V

=-4.5V, I

=-2.8A

=-2.5V, I

=-2A

=-5V, I

=-5A

MIN

-20

-0.4

-0.7

-1.2

±100

-1

110

TYP

MAX

UNIT

mΩ

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