NPN Triple Diffused Planar Type High Voltage Transistor
Description
The HMJE13001 is a medium power transistor designed for use in switching
applications.
TO-92
Features
•
High breakdown voltage
•
Low collector saturation voltage
•
Fast switching speed
Absolute Maximum Ratings
•
Maximum Temperatures
Storage Temperature ........................................................................................................................... -55 ~ +150
°C
Junction Temperature .................................................................................................................................... +150
°C
•
Maximum Power Dissipation
Total Power Dissipation (T
A
=25°C) ...................................................................................................................... 1 W
Total Power Dissipation (T
C
=25°C) .................................................................................................................... 10 W
•
Maximum Voltages and Currents
BV
CBO
Collector to Base Voltage....................................................................................................................... 600 V
BV
CEO
Collector to Emitter Voltage.................................................................................................................... 400 V
BV
EBO
Emitter to Base Voltage.............................................................................................................................. 6 V
I
C
Collector Current (DC)................................................................................................................................ 300 mA
I
C
Collector Current (Pulse)............................................................................................................................ 600 mA
I
B
Base Current (DC)........................................................................................................................................ 40 mA
I
B
Base Current (Pulse).................................................................................................................................. 100 mA
Electrical Characteristics
(T
A
=25°C)
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
CEO
I
EBO
*V
CE(sat)1
*V
CE(sat)2
*V
BE(sat)
*h
FE1
*h
FE2
Min.
600
400
6
-
-
-
-
-
-
8
10
Typ.
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
10
10
10
400
750
1
-
36
Unit
V
V
V
uA
uA
uA
mV
mV
V
I
C
=100uA
I
C
=10mA
I
E
=10uA
V
CB
=550V
V
CB
=400V
V
EB
=6V
I
C
=50mA, I
B
=10mA
I
C
=100mA, I
B
=20mA
I
C
=50mA, I
B
=10mA
V
CE
=10V, I
C
=10mA
V
CE
=10V, I
C
=50mA
*Pulse Test: Pulse Width
≤380us,
Duty Cycle≤2%
Test Conditions
HMJE13001
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Current Gain & Collector Current
100
75 C
125 C
o
o
Spec. No. : HA200213
Issued Date : 2002.06.01
Revised Date : 2005.02.05
Page No. : 2/4
Saturation Voltage & Collector Current
100000
V
CE(sat)
@ I
C
=5I
B
25 C
o
Saturation Voltage (mV)
10000
hFE
10
1000
75 C
125 C
o
o
100
25 C
o
hFE @ V
CE
=10V
1
0.1
1
10
100
1000
10
0.1
1
10
100
1000
Collector Current-I
C
(mA)
Collector Current-I
C
(mA)
Saturation Voltage & Collector Current
1000
25 C
1000
o
Power Derating
1200
Saturation Voltage (mV)
PD(mW),Power Dissipation
800
125 C
o
75 C
o
600
400
V
BE(sat)
@ I
C
=5I
B
200
100
0.1
1
10
100
1000
0
0
20
40
o
60
80
100
120
140
160
Collector Current-I
C
(mA)
Ta( C), Ambtient Temperatuer
Safe Operating Area
1
Collector Current-I
C
(A)
0.1
PT=1mS
PT=100mS
PT=1S
0.01
1
10
100
1000
Forward Voltage-V
CE
(V)
HMJE13001
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
TO-92 Dimension
A
B
1
2
3
Spec. No. : HA200213
Issued Date : 2002.06.01
Revised Date : 2005.02.05
Page No. : 3/4
α
2
Marking:
Pb Free Mark
Pb-Free: "
.
"
(Note)
Normal: None
H MJ E
1 3 0 0 1
Control Code
α
3
Date Code
Note: Green label is used for pb-free packing
C
D
Pin Style: 1.Emitter 2.Collector 3.Base
Material:
•
Lead solder plating: Sn60/Pb40 (Normal),
Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free)
•
Mold Compound: Epoxy resin family,
flammability solid burning class: UL94V-0
DIM
A
B
C
D
E
F
G
H
I
α1
α2
α3
Min.
4.33
4.33
12.70
0.36
-
3.36
0.36
-
-
-
-
-
Max.
4.83
4.83
-
0.56
*1.27
3.76
0.56
*2.54
*1.27
*5°
*2°
*2°
H
I
E
F
G
*: Typical, Unit: mm
α
1
3-Lead TO-92 Plastic Package
HSMC Package Code: A
TO-92 Taping Dimension
DIM
A
D
D1
D2
F1,F2
H
H1
H2
H2A
H3
H4
L
L1
P
P1
P2
T
T1
T2
W
W1
Min.
4.33
3.80
0.36
4.33
2.40
15.50
8.50
-
-
-
-
-
2.50
12.50
5.95
50.30
-
-
0.36
17.50
5.00
Max.
4.83
4.20
0.53
4.83
2.90
16.50
9.50
1
1
27
21
11
-
12.90
6.75
51.30
0.55
1.42
0.68
19.00
7.00
Unit: mm
H2
H2
H2A H2A
D2
A
H3
H4 H
L
L1
H1
F1F2
T2
T
T1
P1
P
P2
D1
D
W1
W
Important Notice:
•
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
•
HSMC reserves the right to make changes to its products without notice.
•
HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
•
HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
•
Head Office
(Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454
•
Factory 1:
No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
[size=4][color=#000000][backcolor=white]Problem[/backcolor][/color][/size] [size=4][color=#000000][backcolor=white]Sometimes we want to use macro definitions to decide whether to compile debug version...
[i=s]This post was last edited by Jacktang on 2021-8-28 23:09[/i]1. Introduction
CAN bus was developed by BOSCH of Germany, with a maximum speed of 1Mbps. CAN has a strong fault tolerance, and the CAN...
By combining power delivery and communications over a single Cat3 or Cat5 cable, engineers can quickly build Ethernet networks at a lower cost and with less maintenance than would be possible with sep...
Without impedance control, it will cause considerable signal reflection and signal distortion, leading to design failure. Common signals, such as PCI bus, PCI-E bus, USB, Ethernet, DDR memory, LVDS si...
Many desktop computers do not have wireless network cards and can only be plugged in with a network cable.
If you want to use WiFi, just plug in a USB wireless network card, it's simple and convenient...
Chip company stock prices have performed poorly over the past few months. A recent report from Deutsche Bank predicted that this earnings season could show more signs of weakness. However, Qualcom...[Details]
Recently, Professor Ren Tianling's team at the School of Integrated Circuits at Tsinghua University made a major breakthrough in the research of small-size transistors, and for the first time realiz...[Details]
TSMC's N5 process has been mass-produced, followed by N5P and N4. Liu Deyin said that the company will launch N5P in 2022 and N4 in 2023... TSMC recently held its annual shareholders meeting in Hsi...[Details]
According to the latest report from SEMI, global original equipment manufacturers' semiconductor manufacturing equipment will hit a new high next year, expected to exceed US$100 billion. This is a ne...[Details]
On December 22, the "China Integrated Circuit Design Industry 2021 Annual Conference and Wuxi Integrated Circuit Industry Innovation and Development Summit Forum (ICCAD 2021)" was jointly sponsored b...[Details]
On July 1, 2018, Hidetoshi Shibata, the new CEO of Renesas Electronics, officially took office, replacing the former CEO Wu Wenjing who resigned due to declining revenue. Hidetoshi Shibata, New P...[Details]
According to a report on Taiwan's Business Times website on February 4, the United States continues to expand its ban on semiconductor exports to mainland China. The U.S. Department of Commerce plans...[Details]
Less than two years ago, the scientific community was stunned by the discovery of a material that could achieve room-temperature superconductivity. Now, a team of physicists at the University of Ne...[Details]
Engineers in Sydney have demonstrated a quantum integrated circuit made of just a few atoms. By precisely controlling the quantum state of atoms, this new processor can simulate the structure and p...[Details]
On September 9, according to the Deputy Chief Minister of Maharashtra, India, Devendra Fadnavis, Beijing time on the 5th of this month, the Indian giant Adani Group and the Israeli wafer foundry To...[Details]
A team of European and Israeli physicists has made a major breakthrough in the field of quantum nanophotonics. They introduced a new type of polariton cavity and redefined the limits of photon conf...[Details]
The "4th Global IC Entrepreneurs Conference and the 19th China International Semiconductor Expo (IC China)" hosted by the China Semiconductor Industry Association and the China Institute of Informati...[Details]
随著半导体产能成为战略物资，掌握7nm先进制程绝对领先优势的台积电成为大国觊觎目标，面对地缘政治风险压力，在台湾扩产轻松自在又省钱的台积电，被迫宣布在日本与美国设厂。 Outsiders believe that building a factory in the United States will seriously drag down TSMC's profits, and there...[Details]
Four of Europe's top deep technology research institutions - IMEC, Leti, Fraunhofer and VTT - have jointly established an alliance called RTO and plan to invest 156 million euros to advance 300mm man...[Details]
The production and manufacturing of semiconductor products involves a variety of high-end precision technologies and can be regarded as the jewel in the crown of industrial manufacturing. In partic...[Details]
EE_FPGA Learning Park
京公网安备 11010802033920号
EEWORLD
