20V 6.5AN channel enhancement mode MOSFET
Features
Product Name: 20V 6.5AN channel enhancement mode MOSFET
N-Channel Enhancement-Mode MOSFET (20V, 50A)
(Battery Switch, ESD Protected)
Product model: H6968S
product features:
RDS(on)=32mΩ@VGS=2.5V, ID=5.5A;
RDS(on)=24mΩ@VGS=4.5V, ID=6.5A
Advanced trench process technology
High Density Cell Design for Ultra Low On-Resistance
Specially Designed for Li ion Battery Packs Use
Designed for Battery Switch Appliactions
ESD Protected
parameter:
Channel: N
VDSS voltage: 20V
ID Current: 6.5A
VGS start voltage: ±12V
RDS (on) Max. on-resistance: 0.024ohm
RDS(on) @VGS : 4.5V
RDS(on) @ID:6.5A
ESD Protected :NO
ROSH: PF (lead-free)
Package:SO-8
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