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G86N06K

Description
Drain-source voltage (Vdss): 60V Continuous drain current (Id) (at 25°C): 68A (Tc) Gate-source threshold voltage: 4V @ 250uA Drain-source on-resistance: 8.4mΩ @ 4A, 10V Maximum power consumption Dispersion (Ta=25°C): 88W (Tc) Type: N-channel 60V 68A 7.9mΩ@10V
CategoryDiscrete semiconductor    MOS (field effect tube)   
File Size763KB,6 Pages
ManufacturerGoford Semiconductor
Websitehttp://www.goford.cn/
Shenzhen Gufeng Electronics Co., Ltd. GOFORD SEMICONDUCTOR was established in Hong Kong in 1995. Now it has established branches, offices and agency networks all over the world. National high-tech enterprises. GOFORD focuses on the research and development, production and sales of semiconductor power components MOSFET field effect tubes. The company provides high-reliability products through strict quality management system and assessment; continuous technological research and development innovation to meet the needs of market segments and product cost-effectiveness; with a global layout vision, it continues to promote the popularity of the GOFORD brand in the field of power devices. GOFORD is committed to creating a world-renowned power device brand!
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G86N06K Overview

Drain-source voltage (Vdss): 60V Continuous drain current (Id) (at 25°C): 68A (Tc) Gate-source threshold voltage: 4V @ 250uA Drain-source on-resistance: 8.4mΩ @ 4A, 10V Maximum power consumption Dispersion (Ta=25°C): 88W (Tc) Type: N-channel 60V 68A 7.9mΩ@10V

G86N06K Parametric

Parameter NameAttribute value
Drain-source voltage (Vdss)60V
Continuous drain current (Id) at 25°C68A(Tc)
Gate-source threshold voltage4V @ 250uA
Drain-source on-resistance8.4mΩ @ 4A,10V
Maximum power dissipation (Ta=25°C)88W(Tc)
typeN channel

G86N06K Preview

Download Datasheet
GOFORD
Description
The G86N06K uses advanced trench technology to provide
excellent R
DS(ON)
, low gate charge and rugged E
AS
capability. This device is suitable for PWM, load switching
especially for E-Bike controller application.
D
60V
G86N06K
V
DSS
R
DS (on)
@ 10V (Typ.)
I
D
68
A
7.9
mΩ
General Features
High power and current handing capability
100% UIS Test
RoHS Compliant
S
Schematic Diagram
G
Application
Hard Switched and High Frequency Circuits
48V E-Bike Controller Applications
Uninterruptible Power Supply
Ordering Information
Part Number
G86N06K
Marking
G86N06
Case
TO-252
Packaging
2500pcs/Reel
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
V
DS
Gate-Source Voltage
V
GS
I
D
Drain Current (DC) at T
C
=25℃
Drain Current (DC) at T
C
=100℃
Drain Current-Pulsed (Note 1)
Maximum Power Dissipation (T
C
=25℃)
Derating Factor
Limit
60
±20
68
47.6
272
88
0.59
Unit
V
V
A
A
A
W
W/℃
mJ
I
D
I
DM
P
D
Single Pulse Avalanche Energy
(Note 2)
Operating Junction and Storage Temperature Range
E
AS
T
J
,T
STG
380
-55 To 175
Thermal Characteristic
Thermal Resistance,Junction-to-Case (Note 2)
R
θJC
1.7
℃/W
Electrical Characteristics (TA=25℃unless otherwise noted)
Parameter
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
BV
DSS
I
DSS
V
GS
=0V I
D
=250μA
V
DS
=60V,V
GS
=0V
60
-
-
-
-
1
V
μA
Symbol
Condition
Min
Typ
Max
Unit
HTTP://www.gofordsemi.com
TEL:0 7 5 5-2996126 2
FAX : 075 5- 2 9 9 6 14 6 6
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