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FR103S

Description
Rectifier Diode, 1 Element, 1A, 200V V(RRM)
CategoryDiscrete semiconductor    diode   
File Size128KB,2 Pages
ManufacturerYangzhou Yangjie Electronic Technology Co., Ltd.
Websitehttp://www.21yangjie.com/
Environmental Compliance
Yangzhou Yangjie Electronic Technology Co., Ltd. was established on August 2, 2006 with a registered capital of RMB 472 million. In January 2014, the company was listed on the Shenzhen Stock Exchange's Growth Enterprise Market with the stock code 300373. In 2017, the company's operating income was RMB 1.47 billion. The company integrates R&D, production and sales, and is professionally committed to the industrial development of power semiconductor chips and device manufacturing, integrated circuit packaging and testing, etc. The company's main products are various power electronic device chips, power diodes, rectifier bridges, high-power modules, DFN/QFN products, SGT MOS and silicon carbide SBD, silicon carbide JBS, etc. The products are widely used in many fields such as consumer electronics, security, industrial control, automotive electronics, and new energy.
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FR103S Overview

Rectifier Diode, 1 Element, 1A, 200V V(RRM)

FR103S Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
Reach Compliance Codeunknown
ConfigurationSINGLE
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.3 V
Maximum non-repetitive peak forward current30 A
Number of components1
Maximum operating temperature125 °C
Maximum output current1 A
Maximum repetitive peak reverse voltage200 V
Maximum reverse recovery time0.15 µs
surface mountNO
Base Number Matches1

FR103S Preview

Download Datasheet
FR101S THRU FR107S
快恢复二极管
Fast Recovery Rectifier
■特征
Features
■外½尺寸和印记
Outline Dimensions and Mark
(A-405 )
.205(5.21)
.166(4.22)
1.0(25.4)
MIN
1.0(25.4)
MIN
●I
o
1.0A
●VRRM
50V-1000V
●耐正向浪涌电流½力高
●High
surge current capability
●整流用
Rectifier
.080(2.03)
.021(0.53)
Unit: in inches (millimeters)
■极限值(绝对最大额定值)
Limiting Values (Absolute Maximum Rating)
参数名称
Item
反向重复峰值电压
Repetitive Peak Reverse Voltage
正向平均电流
Average Forward Current
正向(不重复)浪涌电流
Surge(Non-repetitive)Forward
Current
结温
Junction Temperature
储存温度
Storage Temperature
符号
Symbol
V
RRM
I
F(AV)
I
FSM
T
J
T
STG
单½
Unit
V
A
条件
Conditions
FR1
01S 02S 03S 04S 05S 06S 07S
50
100
200
400
600
800
1000
A
正弦半波60Hz,电阻负½½,Ta=50
60Hz Half-sine wave, Resistance
load, Ta=50℃
正弦半波60Hz,
一个周期,
Ta=25℃
60Hz Half-sine wave,1 cycle,
Ta=25℃
1.0
30
-55~+125
-55 ~ +150
■电特性
(Ta=25℃ 除非另有规定)
Electrical Characteristics (Ta=25℃ Unless otherwise specified)
参数名称
Item
正向峰值电压
Peak Forward Voltage
反向峰值电流
Peak Reverse Current
反向恢复时间
Reverse Recovery time
热阻(典型)
Thermal
Resistance(Typical)
符号
Symbol
V
FM
I
RRM1
I
RRM2
t
rr
R
θ
J-A
单½
Unit
V
μA
ns
测试条件
Test Condition
I
FM
=1.0A
V
RM
=V
RRM
Ta=25℃
FR1
01S
02S
03S
04S
1.3
5
50
150
60
30
250
500
05S
DIA
■用途
Applications
.107(2.72)
.025(0.64)
06S
07S
/W
R
θ
J-L
Ta=125℃
I
F
=0.5A I
R
=1A
I
RR
=0.25A
结和环境之间
Between junction and ambient
结和引线之间
Between junction and lead
Document Number 0116
Rev. 1.0, 22-Sep-11
扬州扬杰电子科技股½有限公司
YANGZHOU YANGJIE SEMICONDUCTOR CO.,LTD.
www.21yangjie.com
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