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FMMBD4448HADW

Description
SURFACE MOUNT SWITCHING DIODE ARRAYS
File Size211KB,4 Pages
ManufacturerJCET
Websitehttp://www.cj-elec.com/

Jiangsu Changdian Technology Co., Ltd. focuses on semiconductor packaging and testing business, providing customers at home and abroad with a full range of solutions such as chip testing, packaging design, packaging testing, etc. The company was successfully listed on the Shanghai Main Board in 2003, becoming the first semiconductor packaging and testing listed company in China. It now has a national enterprise technology center and a postdoctoral research workstation. It is a national key high-tech enterprise, a supporting unit of the National Engineering Laboratory for High-density Integrated Circuits, and the chairman unit of the Integrated Circuit Packaging Technology Innovation Strategic Alliance.

Discrete devices: diodes (switching diodes, Schottky diodes (Schottky rectifiers), voltage regulator diodes, Pin diodes, TVS diodes, rectifier diodes, fast recovery diodes); transistors (Darlington tubes, digital transistors, MOSFETs); thyristors: silicon-controlled rectifiers, triacs; composite tubes: transistors + field-effect tubes, dual transistors, dual digital transistors, digital transistors + transistors, transistors + diodes, field-effect tubes + diodes, dual field-effect tubes. Voltage regulator circuit; energy-saving lamp charger switch tube

Lead frame: TO series (TO); SOD series (SOD); SOT series (TSOT, SOT); FBP series (WBFBP); QFN series (QFNWB, DFNWB, DFNFC, QFNFC); ​​QFP series (LQFP: PQFP: PLCC: TQFP); SIP series (SIP, HSIP, FSIP); SOP series (SOP, HSOP, SSOP, MSOP, HTSOP, TSSOP); DIP series (DIP, FDIP, SDIP); PDFN series; PQFN series; MIS series (MISFC, MISWB)

Nine core technologies: Through Silicon Via (TSV) packaging technology; SiP RF packaging technology; wafer-level 3D rewiring packaging process technology; copper bump interconnection technology; high-density FC-BGA packaging and testing technology (Flip Chip BGA); multi-turn array four-sided pinless packaging and testing technology; package body 3D stacking technology; 50μm or less ultra-thin chip 3D stacking packaging technology; MEMS multi-chip packaging technology; MIS packaging technology (pre-encapsulated interconnection system); BGA packaging technology, etc.

 

 

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SURFACE MOUNT SWITCHING DIODE ARRAYS

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
WBFBP-06C Plastic-Encapsulate Diode
FMMBD4448HADW
SURFACE MOUNT SWITCHING DIODE ARRAYS
DESCRIPTION
Silicon epitaxial planar
Switching Diode
FEATURES
Ultra-Small Surface Mount Package
Fast Switching Speed
High Conductance
APPLICATION
For General Purpose Switching Applications, rectifiers
For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM,
DVD-ROM, Note book PC, etc.)
WBFBP-06C
(2×2×0.5)
unit: mm
1
Maximum Ratings and Electrical Characteristics, Single Diode @T
A
=25
Parameter
Non-Repetitive Peak reverse voltage
Peak Repetitive peak reverse voltage
Working Peak Reverse Voltage
DC Blocking
Voltage
Symbol
V
RM
V
RRM
V
RWM
V
R
V
R(RMS)
I
FM
I
O
I
FSM
Pd
R
θJA
T
J
T
STG
57
500
250
4.0
2.0
150
625
150
80
100
FMMBD4448HADW
Marking:KA6
Unit
V
V
Limits
RMS Reverse Voltage
Forward Continuous Current
Average Rectified Output Current
Non-Repetitive Peak forward surge current @=1.0µs
@=1.0s
Power Dissipation
Thermal Resistance Junction to Ambient
Junction temperature
Storage temperature range
V
mA
mA
A
mW
℃/W
-65 to +150
Electrical Ratings @T
A
=25℃
Parameter
Reverse Breakdown Voltage
Symbol
V
R
V
F1
Forward voltage
V
F2
V
F3
V
F4
Reverse current
Capacitance between terminals
Reverse Recovery Time
I
R1
I
R2
C
T
t
rr
Min.
80
0.62
0.72
0.855
1.0
1.25
0.1
25
3.5
4
Typ.
Max.
Unit
V
V
V
V
V
µA
nA
pF
ns
Conditions
I
R
=100μA
I
F
=5mA
I
F
=10mA
I
F
=100mA
I
F
=150mA
V
R
=70V
V
R
=20V
V
R
=6V,f=1MHz
V
R
=6V,I
F
=5mA
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