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ES3A

Description
Super Fast Recovery Rectifier Diode Super Fast Recovery Rectifier Diode
CategoryDiscrete semiconductor    diode   
File Size143KB,2 Pages
ManufacturerYangzhou Yangjie Electronic Technology Co., Ltd.
Websitehttp://www.21yangjie.com/
Environmental Compliance
Yangzhou Yangjie Electronic Technology Co., Ltd. was established on August 2, 2006 with a registered capital of RMB 472 million. In January 2014, the company was listed on the Shenzhen Stock Exchange's Growth Enterprise Market with the stock code 300373. In 2017, the company's operating income was RMB 1.47 billion. The company integrates R&D, production and sales, and is professionally committed to the industrial development of power semiconductor chips and device manufacturing, integrated circuit packaging and testing, etc. The company's main products are various power electronic device chips, power diodes, rectifier bridges, high-power modules, DFN/QFN products, SGT MOS and silicon carbide SBD, silicon carbide JBS, etc. The products are widely used in many fields such as consumer electronics, security, industrial control, automotive electronics, and new energy.
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ES3A Overview

Super Fast Recovery Rectifier Diode Super Fast Recovery Rectifier Diode

Features

Product Name: Super Fast Recovery Rectifier Diode


Product model: ES3A


product features:


I:3.0A


VRRM :50V-600V


High forward surge current capability


High surge forward current capability


Package: Molded plastic


Cases: Molded plastic



use:


Rectifier



product data:


Repetitive Peak Reverse Voltage VRRM Reverse repetitive peak voltage: 50V



Average Forward Current IF(AV) Average forward current: 3.0A



Surge(Non-repetitive)Forward Current IFSM Forward (non-repetitive) surge current: 100A



Junction Temperature TJ :-55 to +150 ℃



Storage Temperature TSTG storage temperature: -55 to +150 ℃



Peak Forward Voltage (IFM=3.0A) VFM Forward peak voltage: 0.95V



Peak Reverse Current (VRM=VRRM) IRRM1 (Ta=25℃) Reverse peak current: 10μA


IRRM2 (Ta=125℃) Reverse peak current: 500μA



Reverse Recovery time (IF=0.5A, IR=1A, IRR=0.25A) trr Reverse recovery time: 35ns



Thermal Resistance (Typical) RθJ-A Thermal resistance (typical) : 47 ℃/W; RθJ-L Thermal resistance (typical) : 12 ℃/W



Package: DO-214AB (SMC)


ES3A Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerYangzhou Yangjie Electronic Technology Co., Ltd.
Reach Compliance Codeunknown
Is SamacsysN
ConfigurationSINGLE
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.95 V
Maximum non-repetitive peak forward current100 A
Number of components1
Maximum operating temperature150 °C
Maximum output current3 A
Maximum repetitive peak reverse voltage50 V
Maximum reverse recovery time0.035 µs
surface mountYES
Base Number Matches1

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ES3A THRU ES3J
超快恢复整流二极管
Super Fast Recovery Rectifier Diode
■特征
Features
■外½尺寸和印记
Outline Dimensions and Mark
Mounting Pad Layout
0.151
(3.84)
0.150
(3.82)
0.119(3.03)
0.390
(9.90)
I
o
3.0A
V
RRM
50V-600V
耐正向浪涌电流½力高
High surge current capability
封装:模压塑料
Cases: Molded plastic
DO-214AB(SMC)
.129(3.27)
.112(2.85)
.280(7.11)
.260(6.60)
.103(2.61)
.078(1.99)
.060(1.52)
.030(0.76)
.008(0.20)
.004(0.10)
.320(8.13)
.305(7.75)
.012(0.31)
.006(0.15)
.245(6.22)
.220(5.59)
■用途
Applications
●整流用
Rectifier
Dimensions in inches and (millimeters)
■极限值(绝对最大额定值)
Limiting Values (Absolute Maximum Rating)
参数名称
Item
反向重复峰值电压
Repetitive Peak Reverse Voltage
正向平均电流
Average Forward Current
正向(不重复)浪涌电流
Surge(Non-repetitive)Forward
Current
结温
Junction Temperature
储存温度
Storage Temperature
符号
Symbol
V
RRM
I
F(AV)
单½
Unit
V
测试条件
Test Conditions
A
50
正 弦 半 波
60Hz
, 电 阻 负 ½½ ,
T
L
=100℃
60HZ Half-sine wave, Resistance
load, T
L
=100℃
正弦半波60Hz,
一个周期,
Ta=25℃
60Hz Half-sine wave ,1 cycle ,
Ta =25℃
ES3
B
100
C
D
F
300
G
400
H
J
150 200
500 600
A
3.0
I
FSM
T
J
T
STG
A
100
-55~+150
-55 ~ +150
■电特性
(Ta=25℃ 除非另有规定)
Electrical Characteristics (Ta=25℃ Unless otherwise specified)
参数名称
Item
正向峰值电压
Peak Forward Voltage
最大反向恢复时间
Maximum reverse recovery
time
反向漏电流
Peak Reverse Current
热阻(典型)
Thermal
Resistance(Typical)
符号
Symbol
V
F
t
rr
I
RRM1
I
RRM2
R
θ
J-A
单½
Unit
V
ns
μA
测试条件
Test Condition
I
F
=3.0A
I
F
=0.5A,I
R
=1.0A,I
rr
=0.25A
V
RM
=V
RRM
Ta =25℃
Ta =100℃
ES3
A
B
0.95
35
10
500
47
1)
12
1)
C
D
F
1.3
G
H
1.7
J
/W
R
θ
J-L
结和环境之间
Between junction and ambient
结和终端之间
Between junction and terminal
备注:Notes:
1)
热阻从结到环境及从结到引线,在电路板的
0.3" x 0.3" (8.0毫米 x 8.0毫米)铜垫片区
Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B. with 0.3" x 0.3" (8.0 mm x 8.0 mm) copper
pad areas
Document Number 0175
Rev. 1.0, 22-Sep-11
扬州扬杰电子科技股½有限公司
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com
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