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ER2C_R1_00001

Description
Rectifier Diode, 1 Phase, 1 Element, 2A, 600V V(RRM), Silicon, DO-214AA, HALOGEN FREE, PLASTIC, SMB, 2 PIN
CategoryDiscrete semiconductor    diode   
File Size545KB,5 Pages
ManufacturerPANJIT
Websitehttp://www.panjit.com.tw/
Environmental Compliance

PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values ​​include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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ER2C_R1_00001 Overview

Rectifier Diode, 1 Phase, 1 Element, 2A, 600V V(RRM), Silicon, DO-214AA, HALOGEN FREE, PLASTIC, SMB, 2 PIN

ER2C_R1_00001 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
package instructionR-PDSO-C2
Reach Compliance Code_compli
ECCN codeEAR99
applicationGENERAL PURPOSE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.7 V
JEDEC-95 codeDO-214AA
JESD-30 codeR-PDSO-C2
JESD-609 codee3
Maximum non-repetitive peak forward current50 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current2 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum repetitive peak reverse voltage600 V
Maximum reverse current1 µA
Maximum reverse recovery time0.035 µs
surface mountYES
Terminal surfaceTin (Sn)
Terminal formC BEND
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1

ER2C_R1_00001 Preview

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ER2A~ER2J
SURFACE MOUNT RECTIFIER
VOLTAGE
FEATURES
0.155(3.94)
0.083(2.11)
0.075(1.91)
0.185(4.70)
0.160(4.06)
0.096(2.44)
0.050(1.27)
0.030(0.76)
0.220(5.59)
0.200(5.08)
50 to 600 Volts
CURRENT
2 Amperes
• High temperature metallurgically bonded-no compression
contacts as found in other diode-constructed rectifiers
• Glass passivated junction
• Easy pick and place
• Plastic package has Underwriters Laboratory Flammability
Classification 94V-O
Green molding compound as per IEC61249 Std. . (Halogen Free)
MECHANICAL DATA
• Case: JEDEC DO-214AA molded plastic
• Terminals: Solder plated, solderable per MIL-STD-750, Method 2026
• Polarity: Indicated by cathode band
• Standard packaging: 16mm tape (EIA-481)
• Weight: 0.0032 ounce, 0.093 gram
1
2
Cathode
Anode
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
PARAMETER
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Current at T
L
=110
O
C
Peak Forward Surge Current : 8.3ms single half sine-wave
superimposed on rated load(JEDEC method)
Maximum Forward Voltage at 2.0A
Maximum DC Reverse Current T
J
=25
O
C
at Rated DC Blocking VoltageT
J
=100
O
C
Maximum Reverse Recovery Time (Note 1)
Typical Junction capacitance (Note 2)
Typical thermal Resistance (Note 3)
Operating Junction and Storage Temperature Range
SYMBOL
V
R R M
V
R M S
V
D C
I
F (A V )
I
F S M
V
F
I
R
0.95
1.0
150
35
25
20
-55 to +150
O
ER2A
50
35
50
ER2B
100
70
100
0.083(2.13)
• Lead free in comply with EU RoHS 2002/95/EC directives
0.012(0.305)
0.006(0.152)
ER2C
150
105
150
ER2D
200
140
200
2.0
50
ER2E
300
210
300
ER2G
400
280
400
0.130(3.30)
• For surface mounted applications
ER2J
600
420
600
UNITS
V
V
V
A
A
1.25
1.7
V
μA
ns
pF
C/W
O
t
rr
C
J
R
θ
JL
T
J
,T
S T G
C
NOTES:1. Reverse Recovery Test Conditions: I
F
=0.5A, I
R
=1.0A, I
rr
=0.25A
2. Measured at 1 MHz and applied V
r
= 4.0 volts.
3. 8.0 mm
2
( .013mm thick ) land areas.
October 3,2012-REV.06
PAGE . 1
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