ER1001CT datasheet, PDF - EEWORLD Datasheet

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ER1001CT: Description10 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB; CategoryDiscrete semiconductor diode; File Size38KB，2 Pages; ManufacturerPANJIT; Websitehttp://www.panjit.com.tw/; Environmental Compliance; PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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ER1001CT Overview

10 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB

ER1001CT Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	PANJIT
Parts packaging code	TO-220AB
package instruction	R-PSFM-T3
Contacts	3
Reach Compliance Code	_compli
Other features	LOW POWER LOSS
application	EFFICIENCY
Configuration	COMMON CATHODE, 2 ELEMENTS
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	0.95 V
JEDEC-95 code	TO-220AB
JESD-30 code	R-PSFM-T3
Maximum non-repetitive peak forward current	150 A
Number of components	2
Phase	1
Number of terminals	3
Maximum operating temperature	150 °C
Minimum operating temperature	-55 °C
Maximum output current	10 A
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Certification status	Not Qualified
Maximum repetitive peak reverse voltage	100 V
Maximum reverse recovery time	0.035 µs
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED

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DATA SHEET

ER1000CT~ER1004CT

SUPERFAST RECOVERY RECTIFIERS

VOLTAGE

FEATURES

50 to 400 Volts

CURRENT

10 Amperes

TO-220AB

Unit : inch (mm)

• Plastic package has Underwriters Laboratory

Flammability Classification 94V-O.

Flame Retardant Epoxy Molding Compound.

• Exceeds environmental standards of MIL-S-19500/228

• Low power loss, high efficiency.

• Low forwrd voltge, high current capability

• High surge capacity.

• Super fast recovery times, high voltage.

• Pb free product are available :

99% Sn above can meet Rohs environment

substance directive request

.419(10.66)

.387(9.85)

.139(3.55)

MIN

.196(5.00)

.163(4.16)

.054(1.39)

.045(1.15)

.269(6.85)

.226(5.75)

.624(15.87)

.50(12.7)MIN

MECHANICALDATA

Case: TO-220AB Molded plastic

Terminals: Lead solderable per MIL-STD-202G, Method 208

Polarity: As marked.

Standard packaging: Any

Weight: 0.08 ounces, 2.24grams.

.038(0.96)

.019(0.50)

.177(4.5)MAX

.548(13.93)

.025(0.65)MAX

.1(2.54)

Positive CT

MAXIMUM RATING AND ELECTRICAL CHARACTERISTICS

Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.

For capacitive load, derate current by 20%

PA RA M E TE R

M a xi m um R e c ur r e nt P e a k R e ve r s e V o l t a g e

M a xi m um R M S V o l t a g e

M a xi m um D C B l o c k i ng V o l t a g e

M a xi m um A ve r a g e F o r w a r d C ur r e nt . 3 7 5 " ( 9 . 5 m m )

l e a d l e n g t h a t Tc = 1 0 0

P e a k F o r w a r d S ur g e C ur r e nt , 8 . 3 m s s i ng l e ha l f s i ne - w a ve

s up e r i m p o s e d o n r a t e d l o a d ( J E D E C m e t ho d )

M a xi m um F o r w a r d V o l t a g e a t 5 A , p e r e l e m e nt

M a x i m u m D C R e v e r s e C u r r e n t a t TA = 2 5

R a t e d D C B l o c k i n g V o l t a g e TA = 1 0 0

M a x i m u m R e v e r s e R e c o v e r y Ti m e ( N o t e 2 )

Ty p i c a l J u n c t i o n c a p a c i t a n c e ( N o t e 1 )

M a xi m um The r m a l R e s i s t a nc e

O p e r a t i n g J u n c t i o n a n d S t o r a g e Te m p e r a t u r e R a n g e

S YM B O L E R 1 0 0 0 C T E R 1 0 0 1 C T E R 1 0 0 1 A C T E R 1 0 0 2 C T E R 1 0 0 3 C T E R 1 0 0 4 C T

RRM

RMS

F S M

Rθ J C

, T

S TG

3 .0

- 5 0 TO + 1 5 0

0 .9 5

500

100

150

105

150

1 0 .0

150

1 .3 0

200

140

200

300

210

300

400

280

400

U N IT S

C / W

NOTES:

1. Measured at 1 MHz and applied reverse voltage of 4.0 VDC.

2. Reverse Recovery Test Conditions: I

=.5A, I

=1A, Irr=.25A.

3. Both Bonding and Chip structure are available.

STAD-NOV.24.2004

PAGE . 1

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