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ER1000F_TO_00001

Description
Rectifier Diode, 1 Phase, 1 Element, 10A, 50V V(RRM), Silicon, TO-220AC, ITO-220AC, 3/2 PIN
CategoryDiscrete semiconductor    diode   
ManufacturerPANJIT
Websitehttp://www.panjit.com.tw/
Environmental Compliance

PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values ​​include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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ER1000F_TO_00001 Overview

Rectifier Diode, 1 Phase, 1 Element, 10A, 50V V(RRM), Silicon, TO-220AC, ITO-220AC, 3/2 PIN

ER1000F_TO_00001 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerPANJIT
package instructionITO-220AC, 3/2 PIN
Reach Compliance Codenot_compliant
ECCN codeEAR99
Other featuresLOW POWER LOSS
applicationEFFICIENCY
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.95 V
JEDEC-95 codeTO-220AC
JESD-30 codeR-PSFM-T2
Maximum non-repetitive peak forward current150 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current10 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum repetitive peak reverse voltage50 V
Maximum reverse current1 µA
Maximum reverse recovery time0.035 µs
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED

ER1000F_TO_00001 Preview

Download Datasheet
ER1000F~ER1006F
ISOLATION SUPERFAST RECOVERY RECTIFIERS
VOLTAGE
FEATURES
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-O
Flame Retardant Epoxy Molding Compound
• Low power loss, high efficiency
• Low forward voltage, high current capability
• High surge capacity
• Super fast recovery times, high voltage
• Glass passivation junction
• Lead free in compliance with EU RoHS2.0 (2011/65/EU & 2015/865/EU
directive)
• Green molding compound as per IEC61249 Std. . (Halogen Free)
50 to 600 Volt
CURRENT
10 Ampere
MECHANICAL DATA
• Case: ITO-220AC Molded plastic
• Terminals: Lead solderable per MIL-STD-750, Method 2026
• Polarity: As marked.
• Standard packaging: Any
• Weight: 0.055 ounces, 1.56 grams.
MAXIMUM RATING AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
PA RA ME TE R
Ma xi mum Re c urre nt P e a k Re ve rse Vo lta g e
Ma xi mum RMS Vo lta g e
Ma xi mum D C B lo cki ng Vo lta g e
Ma xi mum A ve ra g e F o rwa rd C urre nt a t Tc=1 0 0
O
C
P e a k F o rwa rd S urg e C urre nt, 8 .3 ms s i ng le ha lf s i ne -wa ve
s up e ri mp o s e d o n ra te d lo a d
Ma xi mum F o rwa rd Vo lta g e a t 1 0 A , p e r e le me nt
Ma xi mum D C Re ve rse C urre nt a t Ra te d D C B lo c k i ng
Vo lta g e
Ma xi mum Re ve rse Re c o ve ry Ti me (No te 2 )
Typ i c a l J uncti o n c a p a c i ta nc e (No te 1 )
Typ i c a l The rma l Re s i s ta nc e
Op e ra ti ng J uncti o n a nd S to ra g e Te mp e ra ture Ra ng e
T
J
=2 5
O
C
T
J
=1 0 0
O
C
S YMB OL
E R1 0 0 0 F E R1 0 0 1 F E R1 0 0 1 A F E R1 0 0 2 F E R1 0 0 3 F E R1 0 0 4 F E R1 0 0 6 F
UNITS
V
RRM
V
RMS
V
DC
I
F (AV )
I
F SM
V
F
I
R
t
rr
C
J
R
θJC
T
J
,T
S TG
35
62
3
-5 5 to +1 5 0
0 .9 5
1
500
50
50
35
50
100
70
100
150
105
150
200
140
200
10
150
1 .3
1.7
300
210
300
400
280
400
600
420
600
V
V
V
A
A
V
μA
ns
pF
O
C /
W
C
O
NOTES :
1. Measured at 1 MHz and applied reverse voltage of 4 VDC.
2. Reverse Recovery Test Conditions: I
F
=0.5A, I
R
=-1A, Irr=-0.25A.
3. Both Bonding and Chip structure are available.
February 16,2017-REV.04
PAGE . 1
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