EMD9 datasheet, PDF - EEWORLD Datasheet

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EMD9: DescriptionSmall Signal Bipolar Transistor; CategoryDiscrete semiconductor The transistor; File Size189KB，2 Pages; ManufacturerJCET; Websitehttp://www.cj-elec.com/; Jiangsu Changdian Technology Co., Ltd. focuses on semiconductor packaging and testing business, providing customers at home and abroad with a full range of solutions such as chip testing, packaging design, packaging testing, etc. The company was successfully listed on the Shanghai Main Board in 2003, becoming the first semiconductor packaging and testing listed company in China. It now has a national enterprise technology center and a postdoctoral research workstation. It is a national key high-tech enterprise, a supporting unit of the National Engineering Laboratory for High-density Integrated Circuits, and the chairman unit of the Integrated Circuit Packaging Technology Innovation Strategic Alliance.

Discrete devices: diodes (switching diodes, Schottky diodes (Schottky rectifiers), voltage regulator diodes, Pin diodes, TVS diodes, rectifier diodes, fast recovery diodes); transistors (Darlington tubes, digital transistors, MOSFETs); thyristors: silicon-controlled rectifiers, triacs; composite tubes: transistors + field-effect tubes, dual transistors, dual digital transistors, digital transistors + transistors, transistors + diodes, field-effect tubes + diodes, dual field-effect tubes. Voltage regulator circuit; energy-saving lamp charger switch tube

Lead frame: TO series (TO); SOD series (SOD); SOT series (TSOT, SOT); FBP series (WBFBP); QFN series (QFNWB, DFNWB, DFNFC, QFNFC); QFP series (LQFP: PQFP: PLCC: TQFP); SIP series (SIP, HSIP, FSIP); SOP series (SOP, HSOP, SSOP, MSOP, HTSOP, TSSOP); DIP series (DIP, FDIP, SDIP); PDFN series; PQFN series; MIS series (MISFC, MISWB)

Nine core technologies: Through Silicon Via (TSV) packaging technology; SiP RF packaging technology; wafer-level 3D rewiring packaging process technology; copper bump interconnection technology; high-density FC-BGA packaging and testing technology (Flip Chip BGA); multi-turn array four-sided pinless packaging and testing technology; package body 3D stacking technology; 50μm or less ultra-thin chip 3D stacking packaging technology; MEMS multi-chip packaging technology; MIS packaging technology (pre-encapsulated interconnection system); BGA packaging technology, etc.

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EMD9 Overview

Small Signal Bipolar Transistor

EMD9 Parametric

Parameter Name	Attribute value
Maker	JCET
package instruction	,
Reach Compliance Code	unknown

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

Digital Transistors(built-in resistors)

EMD9

FEATURES

dual digital transistors (NPN+PNP)

SOT-563

Two DTA114Y and DTC114Y transistors are built-in a package

Marking: D9

Equivalent circuit

DTr1

Absolute maximum ratings (T

=25℃)

Parameter

Supply voltage

Input voltage

Output current

Power dissipation

Junction temperature

Storage temperature

Symbol

C(MAX)

stg

Limits

-6~+40

100

150

-55~150

Unit

℃

Electrical characteristics (T

=25℃)

Parameter

Input voltage

Output voltage

Input current

Output current

DC current gain

Input resistance

Resistance ratio

Transition frequency

Symbol

I(off)

I(on)

O(on)

O(off)

3.7

4.7

250

5.7

MHz

=10V ,I

=5mA,f=100MHz

KΩ

Min

0.3

1.4

0.1

0.3

0.88

0.5

Typ

Max

Unit

μA

Conditions

=5V ,I

=100μA

=0.3V ,I

=1mA

=5mA, I

=0.25mA

=5V

=50V, V

=5V ,I

=5mA

B,Jul,2011

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