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ED302

Description
3 A, 200 V, SILICON, RECTIFIER DIODE, TO-252
Categorysemiconductor    Discrete semiconductor   
File Size31KB,2 Pages
ManufacturerPANJIT
Websitehttp://www.panjit.com.tw/

PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values ​​include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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ED302 Overview

3 A, 200 V, SILICON, RECTIFIER DIODE, TO-252

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ED302S Thru ED306S
DPAK SURFACE MOUNT SUPER FAST RECOVERY RECTIFIER
VOLTAGE - 200 to 600 Volts CURRENT - 3.0 Amperes
FEATURES
• For surface mounted applications
• Low profile package
• Built-in strain relief
• Easy pick and place
• Superfast recovery times for high efficiency
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-O
• Glass passivated junction
• High temperature soldering:
260
o
C / 10 seconds at terminals
1
.264(6.7)
.248(6.3)
.098(2.5)
.082(2.1)
DPAK / TO-252
4
.063(1.6)
.047(1.2)
.216(5.5)
.200(5.1)
.024(0.6)
.016(0.4)
2
3
.106(2.7)
.090(2.3)
.032(0.8)
.012(0.3)
MECHANICAL DATA
Case: D PAK/TO-252 molded plastic
Terminals: Solder plated, solderable per MIL-STD-750,Method 2026
Polarity: Color band denotes cathode
Standard packaging: 16mm tape (EIA-481)
Weight: 0.015 ounce, 0.4 gram.
.09 .09
(2.3) (2.3)
.071(1.8)
.051(1.3)
3
2
4
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
o
C ambient temperature unless otherwise specified.
Resistive or inductive load.
SYMBOLS
Maxi mum Recurrent Peak Reverse Voltage
Maxi mum RMS Voltage
Maxi mum D C Blocki ng Voltage
Maxi mum Average Forward Recti fi ed C urrent
at T
C
=75
o
C
Peak Forward Surge C urrent
8.3ms si ngle half si ne-wave superi mposed on
rated load(JED EC method)
Maxi mum Instantaneous Forward Voltage at 3.0A
(Note 1)
Maxi mum D C Reverse C urrent (Note 1)T
A
=25
o
C
at Rated D C Blocki ng Voltage
T
A
=100
o
C
Maxi mum Thermal Resi stance (Note 2)
Maxi mum Reverse Recovery
Storage T mperature Range
e
V
V
V
RRM
ED302S
200
140
200
3.0
ED303S
300
210
300
3.0
ED304S
400
280
400
3.0
.040(1.0) MIN.
.02(.5)
.225(5.7)
.209(5.3)
ED306S
600
480
600
3.0
UNITS
Volts
Volts
Volts
Amps
RMS
DC
I (
AV
)
I
FSM
60
60
60
60
Amps
V
F
0.95
5.0
50
6
80
35
1.25
5.0
50
6
80
35
1.25
5.0
50
6
80
35
1.70
5.0
50
6
80
35
o
Volts
µA
I
R
RθJC
RθJA
T
T
RR
C /W
ns
o
STG
-55 to +150
C
NOTES:
1. Pulse Test with PW=300µsec, 2% Duty Cycle.
2. Mounted on P.C. Board with 14mm
2
(.013mm thick) copper pad areas.
Part Number: ED302S - ED306S
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