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DZ23C39

Description
Zener diode
CategoryDiscrete semiconductor   
File Size554KB,2 Pages
ManufacturerJCET
Websitehttp://www.cj-elec.com/

Jiangsu Changdian Technology Co., Ltd. focuses on semiconductor packaging and testing business, providing customers at home and abroad with a full range of solutions such as chip testing, packaging design, packaging testing, etc. The company was successfully listed on the Shanghai Main Board in 2003, becoming the first semiconductor packaging and testing listed company in China. It now has a national enterprise technology center and a postdoctoral research workstation. It is a national key high-tech enterprise, a supporting unit of the National Engineering Laboratory for High-density Integrated Circuits, and the chairman unit of the Integrated Circuit Packaging Technology Innovation Strategic Alliance.

Discrete devices: diodes (switching diodes, Schottky diodes (Schottky rectifiers), voltage regulator diodes, Pin diodes, TVS diodes, rectifier diodes, fast recovery diodes); transistors (Darlington tubes, digital transistors, MOSFETs); thyristors: silicon-controlled rectifiers, triacs; composite tubes: transistors + field-effect tubes, dual transistors, dual digital transistors, digital transistors + transistors, transistors + diodes, field-effect tubes + diodes, dual field-effect tubes. Voltage regulator circuit; energy-saving lamp charger switch tube

Lead frame: TO series (TO); SOD series (SOD); SOT series (TSOT, SOT); FBP series (WBFBP); QFN series (QFNWB, DFNWB, DFNFC, QFNFC); ​​QFP series (LQFP: PQFP: PLCC: TQFP); SIP series (SIP, HSIP, FSIP); SOP series (SOP, HSOP, SSOP, MSOP, HTSOP, TSSOP); DIP series (DIP, FDIP, SDIP); PDFN series; PQFN series; MIS series (MISFC, MISWB)

Nine core technologies: Through Silicon Via (TSV) packaging technology; SiP RF packaging technology; wafer-level 3D rewiring packaging process technology; copper bump interconnection technology; high-density FC-BGA packaging and testing technology (Flip Chip BGA); multi-turn array four-sided pinless packaging and testing technology; package body 3D stacking technology; 50μm or less ultra-thin chip 3D stacking packaging technology; MEMS multi-chip packaging technology; MIS packaging technology (pre-encapsulated interconnection system); BGA packaging technology, etc.

 

 

Download Datasheet View All

DZ23C39 Overview

Zener diode

Features

Product Name: Zener Diode


Product model: DZ23C39


product features:


Dual zeners common cathode configuration


300mW Power Dissipation


Ideally suited for automated insertion


Zener Voltages from 2.7V -51V


Ultra-Small Surface Mount Package Power dissipation




Product parameters:


Pd power dissipation: 300mW


Vz stable voltage: Nom=39V Min=37V Max=41V


Zzt breakdown impedance: 90Ω


Zzk breakdown impedance: 300Ω


IR reverse current: 0.1uA


Vf forward voltage drop: 0.9V



Package: SOT-23

DZ23C39 Preview

Download Datasheet
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate DIODE
SOT-23
DZ23C2V7-DZ23C51
ZENER DIODE
FEATURES
Dual zeners common cathode configuration
300mW Power Dissipation
Ideally suited for automated insertion
Zener Voltages from 2.7V -51V
Ultra-Small Surface Mount Package Power dissipation
Maximum Ratings
(T
a
=25℃ unless otherwise specified)
Characteristic
Forward Voltage @ I
F
= 10mA
Power Dissipation(Note 1)
Thermal Resistance, Junction to Ambient Air
Operating and Storage Temperature Range
Symbol
V
F
P
d
R
θJA
T
j
,T
STG
Value
0.9
300
417
-65~ +150
Unit
V
mW
℃/W
Notes: 1. Valid provided that device terminals are kept at ambient temperature.
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