DB3T / DC34T / DB4T
Silicon Bidirectional Trigger Diodes
FEATURES
These diacs are intended for use in thyristor phase control.
circuits for lamp-dimming. universal-motor speed controls.
and heat controls.
MECHANICAL DATA
Case: SOD-123
Terminals: Solderable per MIL-STD-750, Method 2026
1
Top View
Simplified outline SOD-123 and symbol
2
Absolute Maximum Ratings (Ta = 25
°C
)
Parameter
Power Dissipation (T
C
= 100
°C
)
Repetitive Peak On-state Current (tp = 20 µs, f = 100 Hz)
Operating Junction and Storage Temperature Range
Symbol
P
tot
I
TRM
T
j
, T
stg
Value
150
2
- 40 to + 125
Unit
mW
A
°C
Characteristics at T
a
= 25
°C
Parameter
DB3T
Symbol
Min.
28
Max.
36
38
45
3
Unit
V
V
V
V
Breakover Voltage
at C = 22 nF, see diagram 1
DC34T
DB4T
V
BO
30
35
Breakover Voltage Symmetry
at C = 22 nF, see diagram 1
Dynamic Breakover Voltage
at
△I
= [I
BO
to I
F
= 10 mA]
Output Voltage
See diagram 2
Breakover Current
at C = 22 nF
Leakage Current
at V
B
=0.5V
BO
max
Rise Time
See diagram 3
[|+V
BO
|-|- V
BO
|]
|
△V
± |
V
O
I
BO
I
B
t
r
-
5
5
-
-
50
10
V
V
μA
-
-
-
μA
2
μs
REV.08
1 of 3
DB3T / DC34T / DB4T
Diagram1: current-voltage characteristice
Diagram2: Test circuit for output voltage
+
I
F
I
O
I
BO
I
B
0
△
V
(10mA)
10KΩ
220V
50Hz
500KΩ
0.1μF
D.U.T
R=20Ω
V
O
-
V
+V
0.5V
BO
Diagram3 : Test circuit see Fig.2 . Adjust R for lp=0.5A
V
O
-
I
F
V
BO
90％
10％
t
r
Fig.1: Power dissipation versus ambient
temperapture(maximum values)
VBO[Tj]
VBO[Tj=25
°C
]
Fig.2: Power dissipation versus ambient
temperapture(maximum values)
1.08
P,POWER DISSIPATION,mW
150
1.06
120
90
RELATIVE VARIATION OF V
BO
1.04
60
1.02
30
△
T
J
(
°
C)
△
0
25
50
75
100
125
150
1.00
25
50
75
100
125
CASE TEMPERATURE,
°C
T
j
,JUNCTION TEMPERATURE,
°C
Fig.3: Power dissipation versus ambient
temperapture(maximum values)
10
I
TRM
,PEAK PULSE CURRENT,A
1
0.1
0.01
10
100
1000
10000
tp,PULSE DURATION,µs
REV.08
2 of 3
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