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CMPSH-3

Description
Schottky diodes
CategoryDiscrete semiconductor   
File Size4MB,1 Pages
ManufacturerJCET
Websitehttp://www.cj-elec.com/

Jiangsu Changdian Technology Co., Ltd. focuses on semiconductor packaging and testing business, providing customers at home and abroad with a full range of solutions such as chip testing, packaging design, packaging testing, etc. The company was successfully listed on the Shanghai Main Board in 2003, becoming the first semiconductor packaging and testing listed company in China. It now has a national enterprise technology center and a postdoctoral research workstation. It is a national key high-tech enterprise, a supporting unit of the National Engineering Laboratory for High-density Integrated Circuits, and the chairman unit of the Integrated Circuit Packaging Technology Innovation Strategic Alliance.

Discrete devices: diodes (switching diodes, Schottky diodes (Schottky rectifiers), voltage regulator diodes, Pin diodes, TVS diodes, rectifier diodes, fast recovery diodes); transistors (Darlington tubes, digital transistors, MOSFETs); thyristors: silicon-controlled rectifiers, triacs; composite tubes: transistors + field-effect tubes, dual transistors, dual digital transistors, digital transistors + transistors, transistors + diodes, field-effect tubes + diodes, dual field-effect tubes. Voltage regulator circuit; energy-saving lamp charger switch tube

Lead frame: TO series (TO); SOD series (SOD); SOT series (TSOT, SOT); FBP series (WBFBP); QFN series (QFNWB, DFNWB, DFNFC, QFNFC); ​​QFP series (LQFP: PQFP: PLCC: TQFP); SIP series (SIP, HSIP, FSIP); SOP series (SOP, HSOP, SSOP, MSOP, HTSOP, TSSOP); DIP series (DIP, FDIP, SDIP); PDFN series; PQFN series; MIS series (MISFC, MISWB)

Nine core technologies: Through Silicon Via (TSV) packaging technology; SiP RF packaging technology; wafer-level 3D rewiring packaging process technology; copper bump interconnection technology; high-density FC-BGA packaging and testing technology (Flip Chip BGA); multi-turn array four-sided pinless packaging and testing technology; package body 3D stacking technology; 50μm or less ultra-thin chip 3D stacking packaging technology; MEMS multi-chip packaging technology; MIS packaging technology (pre-encapsulated interconnection system); BGA packaging technology, etc.

 

 

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CMPSH-3 Overview

Schottky diodes

Features

Product Name: Schottky Diode


Product model: CMPSH-3


product features:


High Switching Speed


Low Forward Voltage



Product parameters:


Pd dissipated power: 350mW


Io rectified current: 100mA


VR reverse working voltage: 30V


VF forward buck: 1V


IR reverse current: 0.5uA


Trr forward recovery time: 5ns



Package: SOT-23

CMPSH-3 Preview

Download Datasheet
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Diodes
CMPSH-3
SCHOTTKY BARRIER DIODE
SOT-23
FEATURES
High Switching Speed
Low Forward Voltage
MARKING: D95
MAXIMUM RATINGS ( T
a
=25
unless otherwise noted )
Symbol
V
RRM
I
O
I
FRM
I
FSM
P
D
R
θJA
T
j
T
stg
Parameter
Peak Repetitive Reverse Voltage
Continuous Forward Current
Peak Repetitive Forward Current
Non-repetitive Peak Forward Current @ t
p
=10ms
Power Dissipation
Thermal Resistance from Junction to Ambient
Junction Temperature
Storage Temperature
Value
30
100
350
750
350
286
125
-55~+150
Unit
V
mA
mA
mA
mW
℃/W
ELECTRICAL CHARACTERISTICS(T
a
=25
unless otherwise specified)
Parameter
Reverse voltage
Reverse current
Symbol
V
(BR)
I
R
I
R
=100μA
V
R
=25V
I
F
=2mA
Forward voltage
V
F
I
F
=15mA
I
F
=100mA
Total capacitance
Reverse recovery time
C
tot
t
rr
V
R
=1V,f=1MHz
I
F
= I
R
=10mA, I
rr
=0.1×I
R
, R
L
=100Ω
7
5
Test conditions
Min
30
0.5
0.33
0.45
1
pF
ns
V
Typ
Max
Unit
V
μA
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