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CESD323NC8VU-M

Description
Polarity: Unidirectional Peak pulse current (10/1000us): 10A (8/20us) Clamping voltage: 20V Breakdown voltage (minimum): 9V Reverse shutdown voltage (typ.): 8V (Max)
CategoryDiscrete semiconductor    ESD diode   
File Size867KB,4 Pages
ManufacturerCREATEK Microelectronics Co.,Ltd
Websitehttp://www.crea-tek.com/
CREATEK Microelectronics was founded in the United States and entered China in 2009 and reorganized with Chinese companies. It is mainly engaged in the design, manufacture and sales of IGBT, MOSFET, FRD, protection devices, planar magnets, and provides related application solutions. The headquarters is located in China, with a research and development center in San Francisco, a North American sales center, and sales offices in Shenzhen, Shanghai, Suzhou, Taiwan, China, and Singapore.
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CESD323NC8VU-M Overview

Polarity: Unidirectional Peak pulse current (10/1000us): 10A (8/20us) Clamping voltage: 20V Breakdown voltage (minimum): 9V Reverse shutdown voltage (typ.): 8V (Max)

CESD323NC8VU-M Parametric

Parameter NameAttribute value
polarityUnidirectional
Peak pulse current (10/1000us)10A (8/20us)
clamping voltage20V
Breakdown voltage (minimum value)9V
Reverse shutdown voltage (typ)8V (Max)

CESD323NC8VU-M Preview

Download Datasheet
CESD323NC8VU-M
CREATEK Microelectronics
ESD Protection Diode in SOD-323
Features
200Watts
peak pulse power (tp = 8/20μs)
SOD-323 package
Unidirectional
configurations
Low clamping voltage
Low leakage current
Solid-state silicon-avalanche technology
Protection one data/power line to:
1
1
2
IEC 61000-4-2 ±12kV contact ±20kV air
IEC 61000-4-4 (EFT) 40A (5/50ns)
IEC 61000-4-5 (Lightning)
10A
(8/20 μs)
2
Mechanical Data
Applications
Microprocessor based equipment
Notebooks, Desktops, and Servers
Security
Power Line
Power management
Case:
SOD-323 (plastic package).
Lead free; RoHS compliant
Molding Compound Flammability Rating:
UL 94 V-0
Terminals:
High temperature soldering guaranteed:
260 °C/10 sec. at terminals
Absolute Maximum Ratings
Ratings at 25 °C, ambient temperature unless otherwise specified
Parameter
Peak Pulse Power (T
P
=8/20μS)
ESD contact/air discharge (IEC-61000-4-2)
Peak Pulse Current ( t
P
= 8/20μS )
Junction Temperature
Storage temperature
Symbol
P
PP
V
ESD
I
PP
T
J
T
STG
Value
200
8/15
10
-55 to +150
-55 to +150
Unit
W
kV
A
Electrical Characteristics
(T
A
= 25 °C unless otherwise specified)
Parameter
Reverse stand-off Voltage
Reverse Breakdown Voltage
Reverse Leakage Current
Clamping Voltage (IEC 61000-4-5)
Junction Capacitance
Symbol
V
RWM
V
BR
I
R
V
C
C
J
Condition
= 1mA
I
T
V
R
=8V
I
PP
=10A
V
R
=0V, f=1MHz
Min
9
Typ
Max
8
1
Unit
V
V
uA
V
pF
20
90
Rev. 1.0, 23-May-2012
www.crea-tek.com
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