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CESD323L C3VB-M

Description
Reverse shutdown voltage (typ): 3V Breakdown voltage (min): 4V Polarity: - Clamping voltage: 18V Peak pulse current (10/1000us): 20A (8/20us)
CategoryDiscrete semiconductor    ESD diode   
File Size585KB,5 Pages
ManufacturerCREATEK Microelectronics Co.,Ltd
Websitehttp://www.crea-tek.com/
CREATEK Microelectronics was founded in the United States and entered China in 2009 and reorganized with Chinese companies. It is mainly engaged in the design, manufacture and sales of IGBT, MOSFET, FRD, protection devices, planar magnets, and provides related application solutions. The headquarters is located in China, with a research and development center in San Francisco, a North American sales center, and sales offices in Shenzhen, Shanghai, Suzhou, Taiwan, China, and Singapore.
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CESD323L C3VB-M Overview

Reverse shutdown voltage (typ): 3V Breakdown voltage (min): 4V Polarity: - Clamping voltage: 18V Peak pulse current (10/1000us): 20A (8/20us)

CESD323L C3VB-M Parametric

Parameter NameAttribute value
Reverse shutdown voltage (typ)3V
Breakdown voltage (minimum value)4V
polarity-
clamping voltage18V
Peak pulse current (10/1000us)20A (8/20us)

CESD323L C3VB-M Preview

Download Datasheet
CESD323LC3VB-M
CREATEK Microelectronics
Low Capacitance ESD Protection Diode in SOD-323
Features
350Watts peak pulse power (tp = 8/20μs)
Low clamping voltage
Low leakage current
Protection one power line
Low Capacitance: 1.0 pF Typical
IEC 61000-4-2 ±15kV contact ±8kV air
IEC 61000-4-4 (EFT) 40A (5/50ns)
IEC 61000-4-5 (Lightning) 22A (8/20μs
Applications
Mechanical Data
Ethernet - 10/100/1000 Base T
Cellular Phones
Handheld - Wireless Systems
Personal Digital Assistant (PDA)
USB Interface
SOD-323 package
Molding compound flammability rating: UL 94V-0
Packaging: Tape and Reel
RoHS/WEEE Compliant
Schematic & PIN Configuration
SOD-323
Rev. 1.0, 23-May-2012
www.crea-tek.com
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