BZX784C33 datasheet, PDF - EEWORLD Datasheet

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BZX784C33: DescriptionZener diode; CategoryDiscrete semiconductor; File Size2MB，2 Pages; ManufacturerJCET; Websitehttp://www.cj-elec.com/; Jiangsu Changdian Technology Co., Ltd. focuses on semiconductor packaging and testing business, providing customers at home and abroad with a full range of solutions such as chip testing, packaging design, packaging testing, etc. The company was successfully listed on the Shanghai Main Board in 2003, becoming the first semiconductor packaging and testing listed company in China. It now has a national enterprise technology center and a postdoctoral research workstation. It is a national key high-tech enterprise, a supporting unit of the National Engineering Laboratory for High-density Integrated Circuits, and the chairman unit of the Integrated Circuit Packaging Technology Innovation Strategic Alliance.

Discrete devices: diodes (switching diodes, Schottky diodes (Schottky rectifiers), voltage regulator diodes, Pin diodes, TVS diodes, rectifier diodes, fast recovery diodes); transistors (Darlington tubes, digital transistors, MOSFETs); thyristors: silicon-controlled rectifiers, triacs; composite tubes: transistors + field-effect tubes, dual transistors, dual digital transistors, digital transistors + transistors, transistors + diodes, field-effect tubes + diodes, dual field-effect tubes. Voltage regulator circuit; energy-saving lamp charger switch tube

Lead frame: TO series (TO); SOD series (SOD); SOT series (TSOT, SOT); FBP series (WBFBP); QFN series (QFNWB, DFNWB, DFNFC, QFNFC); QFP series (LQFP: PQFP: PLCC: TQFP); SIP series (SIP, HSIP, FSIP); SOP series (SOP, HSOP, SSOP, MSOP, HTSOP, TSSOP); DIP series (DIP, FDIP, SDIP); PDFN series; PQFN series; MIS series (MISFC, MISWB)

Nine core technologies: Through Silicon Via (TSV) packaging technology; SiP RF packaging technology; wafer-level 3D rewiring packaging process technology; copper bump interconnection technology; high-density FC-BGA packaging and testing technology (Flip Chip BGA); multi-turn array four-sided pinless packaging and testing technology; package body 3D stacking technology; 50μm or less ultra-thin chip 3D stacking packaging technology; MEMS multi-chip packaging technology; MIS packaging technology (pre-encapsulated interconnection system); BGA packaging technology, etc.

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BZX784C33 Overview

Zener diode

Features

Product Name: Zener Diode

Product model: BZX784C33

product features:

Planar Die Construction

150mW Power Dissipation

Zener Voltages from 2.4---39V

Ideally Suited for Automated Assembly Processes

Product parameters:

Pd dissipated power: 150mW

Vz stable voltage: Nom=33V Min=31V Max=35V

Zzt breakdown impedance: 80Ω

Zzk breakdown impedance: 325Ω

IR reverse current: 0.1uA

Vf forward voltage drop: 0.9V

Package: SOD-723

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

SOD-723 Plastic-Encapsulate Diodes

BZX784C2V4-BZX784C39

ZENER DIODE

SOD-723

FEATURES

• Planar Die Construction

•

150mW Power Dissipation

•

Zener Voltages from 2.4 – 39V

• Ideally Suited for Automated Assembly Processes

Maximum Ratings(T

= 25℃ unless otherwise specified)

Characteristic

Forward Voltage

Power Dissipation

(Note 1)

Thermal Resistance

from

Junction to Ambient

Operating

Junction

Temperature

Storage Temperature

Range

Symbol

θJA

STG

Value

0.9

150

-55~+150

Unit

℃/W

℃

A,Otc,2011

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